Results 41 to 50 of about 19,412 (287)
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu +2 more
doaj +1 more source
A model study of present-day Hall-effect circulators
Stimulated by the recent implementation of a three-port Hall-effect microwave circulator of Mahoney et al. (MEA), we present model studies of the performance of this device.
Bosco, Stefano +2 more
core +1 more source
Noise shaping Asynchronous SAR ADC based time to digital converter [PDF]
Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits.
Katragadda, Sowmya
core +1 more source
Detailed Analysis of a Regenerative Active Clamping Snubber for a Phase-Shifted Converter
The phase-shifted converter (PSFB) is one of the most used converters for applications where high power and galvanic isolation are required. To achieve zero voltage switching (ZVS) on the primary side these converters use the leakage inductance of the ...
Dorin Petreus, Toma Patarau
doaj +1 more source
Design of Differential Cylindrical Capacitive Displacement Sensor [PDF]
This paper deals with the design of a differential cylindrical capacitive displacement sensor. It consists of four main conductance cylinders that form two capacitors. Their capacitances vary with controlling cylinder displacement.
ABU_AL_AISH Amir +3 more
doaj
Screen‐Printed Flexible Piezoelectric Force Sensor Array with Electromagnetic Interference Shielding
This article introduces a flexible screen‐printed piezoelectric sensor array designed for low‐frequency healthcare applications such as tactile sensing and cardiovascular monitoring. The device integrates interface electronics enabling the simultaneous acquisition of up to 128 signals, along with flexible EMI shielding that significantly reduces noise ...
Joseph Faudou +6 more
wiley +1 more source
This paper comprehensively analyzes desaturation (desat) protection for high voltage (>3.3 kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high dv/dt.
Xingxuan Huang +7 more
doaj +1 more source
Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
This work demonstrates the successful integration of a phenanthroline‐based 2D COF with MnI catalytic sites into a catholyte‐free membrane‐electrode‐assembly cell for CO2 electroreduction. The crystalline COF actively suppresses Mn⁰–Mn⁰ dimerization, achieving a turnover frequency of 617 h⁻¹ at 2.8 V (full‐cell potential), and enabling stable operation.
Laura Spies +8 more
wiley +1 more source
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).
Jae-Sub Ko +3 more
doaj +1 more source

