Results 51 to 60 of about 19,463 (306)

Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT

IEEE Open Journal of Power Electronics, 2022
This paper comprehensively analyzes desaturation (desat) protection for high voltage (>3.3 kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high dv/dt.
Xingxuan Huang, Shiqi Ji, Cheng Nie, Dingrui Li, Min Lin, Leon M. Tolbert, Fred Wang, William Giewont   +7 more
doaj   +1 more source

Suppression of Photo‐Mediated Traps in Integrated Organic Photovoltaic–Photodetector Devices via N‐Type Self‐Assembly‐Driven Interfacial Engineering

Advanced Functional Materials, EarlyView.
Conventional unstable electron transport layers (ETLs) limit self‐powered organic sensors. This work resolves this by developing a n‐type self‐assembled monolayer (SAM), “3‐PAPh”. This SAM forms a chemically stable and structurally ordered interface that fundamentally suppresses defect formation.
Ohhyun Kwon, Jae Hoon Son, Tae Hyuk Kim, Gyeong Min Lee, Seunghyun Oh, Gayoung Ham, Min Jong Lee, Sang Heon Lee, Seon Joong Kim, Hyojung Cha, Han Young Woo, Jae Won Shim   +11 more
wiley   +1 more source

Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET

IEEE Access
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).
Jae-Sub Ko, Cheol-Woong Choi, Woong Kul Lee, Dae-Kyong Kim   +3 more
doaj   +1 more source

Parasitic consideration for differential capacitive sensor

Bulletin of Electrical Engineering and Informatics, 2019
Parasitic integration for a single supply differential capacitive sensing technique is presented in this paper. In real capacitive sensor measurement, parasitic impedance exists in its measurement. This paper objective is to study the effect of capacitive and resistive parasitic to the capacitive sensor circuit.
Nurul Arfah Che Mustapha, A. H. M. Zahirul Alam, Sheroz Khan, Amelia Wong Azman   +3 more
openaire   +2 more sources

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Analytical Switching Model of a 1200V SiC MOSFET in a High-Frequency Series Resonant Pulsed Power Converter for Plasma Generation

IEEE Access, 2019
The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu, Mengqi Wang, Weiyang Zhou, Xiaoming Wang, Guanliang Liu, Changqi You   +5 more
doaj   +1 more source

An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters

Energies, 2022
The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization.
Dong Yan, Lijun Hang, Yuanbin He, Zhen He, Pingliang Zeng   +4 more
doaj   +1 more source

Interfacial and Crystallographic Regulation of Zinc Anode via Electric Double Layer Reconstruction for Highly Stable Zn Anode

Advanced Functional Materials, EarlyView.
Trace amounts of perfluoro‐1‐butanesulfonyl fluoride enables the regulation of the Zn/electrolyte interface by the generated zincophilic ─SO3H groups with long hydrophobic ─CF2 tails, which adsorb strongly onto the Zn surface, displace water molecules from the inner Helmholtz plane, and reconstruct the electrical double‐layer structure.
Dinesh Patel, Yimei Chen, Ashwini Kumar Sharma, Xiaolei Wang   +3 more
wiley   +1 more source

Influence of Resonances on the Noise Performance of SQUID Susceptometers [PDF]

, 2019
Scanning Superconducting Quantum Interference Device (SQUID) Susceptometry simultaneously images the local magnetic fields and susceptibilities above a sample with sub-micron spatial resolution.
Davis, Samantha I., Kirtley, John R., Moler, Kathryn A.   +2 more
core   +2 more sources

Correlated double sampling integrator insensitiveto parasitic capacitance

Electronics Letters, 2001
A new correlated double sampling (CDS) scheme is proposed which improves the operation of an integrator with a large parasitic capacitor at the input node of an op-amp. It suppresses the effects of the 1/f noise and offset voltage of the op-amp, as well as the kTC charge noise from the parasitic capacitor.
T. Kajita, G.C. Temes, U.-K. Moon
openaire   +1 more source