Results 121 to 130 of about 47,947 (303)

Properly even harmonious labelings of disconnected graphs

open access: yesAKCE International Journal of Graphs and Combinatorics, 2015
A graph G with q edges is said to be harmonious if there is an injection f from the vertices of G to the group of integers modulo q such that when each edge xy is assigned the label f(x)+f(y)(modq), the resulting edge labels are distinct. If G is a tree,
Joseph A. Gallian, Danielle Stewart
doaj   +1 more source

On paths and cycles dominating hypercubes

open access: yesDiscrete Mathematics, 2003
Let \(\text{c}_n\), \(\text{p}_n\) and \(\text{cyc}_n\) denote the minimum number of vertices in a dominating set, a dominating path and a dominating cylce of the \(n\)-dimensional hypercube, respectively. The authors prove that \(\text{cyc}_n \leq 2^{m-p}(2^k+2)\) for \(p\geq 2\), \(m=2^p-1\), \(1\leq k\leq 2^p\) and \(n=m+k\), \(\text{c}_n\geq 2 ...
Tomás Dvorák   +2 more
openaire   +1 more source

Electrified Damage in Motion Systems

open access: yesAdvanced Engineering Materials, EarlyView.
The electrified damage in motion systems is a fundamental framework presenting the degradation pathway arising from the coupling of electrical energy transport with mechanical contact and interfacial chemistry. The framework positions electrified damage as a distinct degradation regime with unique characteristic surface morphologies and failures of ...
M. Humaun Kabir   +2 more
wiley   +1 more source

Chromaticity of the complements of paths and cycles

open access: yesDiscrete Mathematics, 1996
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
openaire   +2 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Interconnection networks for parallel and distributed computing [PDF]

open access: yes, 2008
Parallel computers are generally either shared-memory machines or distributed- memory machines. There are currently technological limitations on shared-memory architectures and so parallel computers utilizing a large number of processors tend tube ...
Xiang, Yonghong
core  

Nonderogatory Directed Webgraph

open access: yesInternational Journal of Mathematics and Mathematical Sciences, 2013
By assigning a certain direction to the webgraphs, which are defined as the Cartesian product of cycles and paths, we prove that they are nonderogatory.
Ilhan Hacioglu   +3 more
doaj   +1 more source

Exploring Curvature Effects in Direct‐Written 3D Curved Hollow Magnetic Nanoshells

open access: yesAdvanced Functional Materials, EarlyView.
Fabricated by a hybrid FEBID/CVD method, 3D PtC/Co3Fe core–shell heterostructures with engineered curvature and shell thickness exhibit complex reversal modes with axially symmetric N'eel‐type domain walls. XMCD‐PEEM combined with full‐scale micromagnetic simulations reveal how curvature and thickness govern the domain wall energy landscape and shape ...
Oleksii M. Volkov   +10 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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