Results 91 to 100 of about 868 (191)

Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs

In this paper, we aim to analyse the behaviour of 100 V p-GaN gate AlGaN/GaN HEMTs under varying measurement conditions, focusing on the interplay between Positive Bias Temperature Instability (PBTI) and the Back-Effect (BE).
Giorgino G., Zagni N., Iucolano F., Luongo G., Castagna M. E., Cioni M., Miccoli C., Tringali C., Cappellini G., Modica L., Chini A.   +10 more
core   +1 more source

Fast method of Lifetime estimation for High-k nMOSFET and Study on electron trap distributions under PBTI

, 2020
Doctor이 논문은 PBTI 하에서 HfSiON/SiO2 dielectric nMOSFETs의 수명을 빠르고 정확하게 예측하는 방법을 제안하고, electron trap분포를 분석합니다. PBTI 하에서 HfSiON/SiO2 dielectric nMOSFETs의 수명을 빠르고 정확하게 예측하는 방법이 제안되었습니다. VRS열화는 n
노기윤
core  

Relation of forward and backward traveling pressure waves with subclinical carotid artery wall remodeling and central pulse pressure.

J Appl Physiol (1985), 2023
Armstrong MK, Nuckols VR, Gimblet CJ, Holwerda SW, DuBose LE, Luehrs RE, Lane AD, Chirinos JA, Voss MW, Pierce GL.   +9 more
europepmc   +1 more source

Degradation Measurement and Modelling under Ageing in a 16 nm FinFET FPGA. [PDF]

Micromachines (Basel), 2023
Sobas J, Marc F.
europepmc   +1 more source

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique. [PDF]

Nanomaterials (Basel), 2023
Chang H, Wang G, Yang H, Liu Q, Zhou L, Ji Z, Yu R, Wu Z, Yin H, Du A, Li J, Luo J, Zhao C, Wang W.   +13 more
europepmc   +1 more source

Improving Performance of Al₂O₃/AlN/GaN MIS HEMTs via In Situ N₂ Plasma Annealing. [PDF]

Micromachines (Basel), 2023
Sun M, Wang L, Zhang P, Chen K.
europepmc   +1 more source

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. [PDF]

Nat Electron, 2022
Knobloch T, Uzlu B, Illarionov YY, Wang Z, Otto M, Filipovic L, Waltl M, Neumaier D, Lemme MC, Grasser T.   +9 more
europepmc   +1 more source

Structural, Magnetic, Dielectric and Piezoelectric Properties of Multiferroic PbTi_1-xFe_xO_3-δ Ceramics. [PDF]

Materials (Basel), 2021
Abd Elmadjid K, Gheorghiu F, Zerdali M, Turcan I, Hamzaoui S.   +4 more
europepmc   +1 more source

Effect of Device Geometries on HCI and PBTI of Gate First High-K Metal Gate NMOS Transistors

, 2014
As the scaling of MOS transistor is approaching the physical limits, large leakage current is becoming a major obstacle. Therefore, high-K materials have been introduced as gate dielectrics in the transistors to further continue technology ...
Jain, Sharad Kumar
core  

The Effects of Rod Bending Method and Metal Type on Fatigue Strength and Corrosion in Posterolateral Lumbar Fusion. [PDF]

Global Spine J
Corman S, Gao Y, DeVries Watson N, Fredericks D, Olinger C.   +4 more
europepmc   +1 more source