Results 101 to 110 of about 868 (191)

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

Oxygen-responsive KoBdcA/KoBdcB/KoBpdA system regulates c-di-GMP levels to control bacterial cellulose biosynthesis and motility in <i>Kosakonia oryzendophytica</i> FY-07. [PDF]

Microbiol Spectr
Zhao X, Shi Y, Tian W, Tian Y, Hu C, Guo Z, Ma T, Li G, Gao G.   +8 more
europepmc   +1 more source

Reliability analysis of power gated SRAM under combined effects of NBTI, PBTI in nano-scale CMOS

, 2010
Transistor aging effects (NBTI and PBTI) impact the reliability of SRAM in Nano-scale CMOS technologies. In this research, the combined effect of NBTI and PBTI on power gated SRAM is analyzed. Optimal source biasing in the standby mode is presented as an
Anuj Pushkarna
core  

Near-zero hysteresis van der Waals MnAl₂S₄ field-effect transistors with low minimal threshold voltage degradation and high thermal stability. [PDF]

Commun Mater
Sattari-Esfahlan SM, Illarionov Y, Xu F, Provias A, Mirzaei S, Michalička J, Knobloch T, Man O, Zhou Y, Grasser T.   +9 more
europepmc   +1 more source

Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors. [PDF]

ACS Nano
Bahrami M, Davoudi MR, Verdianu A, Khakbaz P, Waldhoer D, Wilhelmer C, Tang J, Tan C, Nazir A, Zheng Y, Liu C, Peng H, Knobloch T, Waltl M, Grasser T.   +14 more
europepmc   +1 more source

TDDB and PBTI characterizations of fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx gate dielectric stack

, 2017
Characterizations were conducted in this work to investigate the stability and reliability of the E-mode GaN MIS-FETs with fully recessed gate structure and highly reliable LPCVD-SiNx gate dielectric.
Wei, Jin, Chen, Kevin J., Tang, Gaofei, Hua, Mengyuan, Zhang, Zhaofu, Qian, Qingkai   +5 more
core  

Stability and Reliability of van der Waals High-κ SrTiO₃ Field-Effect Transistors with Small Hysteresis. [PDF]

ACS Nano
Sattari-Esfahlan SM, Yang AJ, Ghosh R, Zheng W, Rzepa G, Knobloch T, Lanza M, Renshaw Wang X, Grasser T.   +8 more
europepmc   +1 more source

Wafer-Scale Synthesis of WS₂ Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition. [PDF]

Research (Wash D C), 2021
Yang H, Wang Y, Zou X, Bai R, Wu Z, Han S, Chen T, Hu S, Zhu H, Chen L, Zhang DW, Lee JC, Lu X, Zhou P, Sun Q, Yu ET, Akinwande D, Ji L.   +17 more
europepmc   +1 more source

Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. [PDF]

Micromachines (Basel)
Cao Y, Zhang Z, Zhang L, Li M, Su S, Zhang W, Xu Y, Huang D, Liu L, Lv L, Ma X.   +10 more
europepmc   +1 more source

Enhanced soft error resilience of NBTI-tolerant dual mode Schmitt trigger circuit. [PDF]

Sci Rep
Kannaujiya A, Shah AP.
europepmc   +1 more source