Results 1 to 10 of about 102 (93)

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs [PDF]

Micromachines, 2023
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD)
Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer   +12 more
doaj   +2 more sources

Positive Bias Temperature Instability in SiC-Based Power MOSFETs [PDF]

Micromachines
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs.
Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico   +8 more
doaj   +2 more sources

Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

IEEE Journal of the Electron Devices Society, 2019
This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La2O3 dipole-doped N-type MOSCAP.
Fu-Yuan Jin, Ting-Chang Chang, Chien-Yu Lin, Jih-Chien Liao, Fong-Min Ciou, Yu-Shan Lin, Wei-Chun Hung, Kai-Chun Chang, Yun-Hsuan Lin, Yen-Cheng Chang, Ting-Tzu Kuo   +10 more
doaj   +3 more sources

Positive-bias temperature instability (PBTI) of GaN MOSFETs [PDF]

2015 IEEE International Reliability Physics Symposium, 2015
We have investigated the stability of the gate stack of GaN n-MOSFETs under positive gate stress. Devices with a gate dielectric that consists of pure SiO 2 or a composite SiO 2 /Al 2 O 3 bilayer were studied. Our research has targeted the evolution of threshold voltage (V T ), subthreshold swing (S) and transconductance (g m ) after positive gate ...
Guo, Alex, del Alamo, Jesus A.
openaire   +3 more sources

Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

Journal of Information Display, 2021
As two-dimensional (2D) materials have a large surface to volume ratio, the stability of thin film transistors (TFTs) is likely to be lowered with air exposure.
Woonggi Hong, Dong Sik Oh, Sung-Yool Choi   +2 more
doaj   +1 more source

A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack

IEEE Journal of the Electron Devices Society, 2021
AC positive bias temperature instability (PBTI) of germanium nMOSFETs with GeO2/Ge and Si-cap/Ge gate stack was investigated in this brief. AC-DC-AC alternating PBTI stress tests were conducted on both types of devices, the experiment data shows the ...
Rui Gao, Jigang Ma, Xiaoling Lin, Xiaowen Zhang, Yunfei En, Guoguang Lu, Yun Huang, Zhigang Ji, Hong Yang, Weidong Zhang, Jianfu Zhang   +10 more
doaj   +1 more source

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs [PDF]

IEEE Transactions on Electron Devices, 2016
In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, i.e., plasma-enhanced atomic layer deposition (PEALD) SiN and ALD Al2O3 gate dielectric, are used to study the origin of positive bias temperature instability (PBTI). By employing a set of dedicated stress-recovery tests, we study PBTI during the stress and relaxation ...
Wu, Tian-Li, Franco, Jacopo, Marcon, Denis, Bakeroot, Benoit, De Jaeger, Brice, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan   +8 more
openaire   +2 more sources

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Frontiers in Physics, 2020
The positive bias temperature instability (PBTI) reliability of buried InGaAs channel n-MOSFETs with an InP barrier layer and Al2O3 gate dielectric under medium field (2.7 MV/cm) and high field (5.0 MV/cm) are investigated in this paper.
Haiou Li, Kangchun Qu, Xi Gao, Yue Li, Yonghe Chen, Zhiping Zhou, Lei Ma, Fabi Zhang, Xiaowen Zhang, Tao Fu, Xingpeng Liu, Yingbo Liu, Tangyou Sun, Honggang Liu   +13 more
doaj   +1 more source

Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs

Journal of Low Power Electronics and Applications, 2020
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers.
Esteban Guevara, Victor Herrera-Pérez, Cristian Rocha, Katherine Guerrero   +3 more
doaj   +1 more source

Impact of negative and positive bias temperature stress on 6T-SRAM cells [PDF]

Advances in Radio Science, 2009
With introduction of high-k gate oxide materials, the degradation effect <i>Positive Bias Temperature Instability</i> (PBTI) is starting to play an important role.
S. Drapatz, G. Georgakos, D. Schmitt-Landsiedel   +2 more
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