Results 1 to 10 of about 185 (103)

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs [PDF]

Micromachines, 2023
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD)
Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer   +12 more
doaj   +2 more sources

Positive Bias Temperature Instability in SiC-Based Power MOSFETs [PDF]

Micromachines
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs.
Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico   +8 more
doaj   +2 more sources

Ferulic Acid: A Natural Phenol That Inhibits Neoplastic Events through Modulation of Oncogenic Signaling [PDF]

Molecules, 2022
Despite the immense therapeutic advances in the field of health sciences, cancer is still to be found among the global leading causes of morbidity and mortality.
Hardeep Singh Tuli, Ajay Kumar, Seema Ramniwas, Renuka Coudhary, Diwakar Aggarwal, Manoj Kumar, Ujjawal Sharma, Nidarshana Chaturvedi Parashar, Shafiul Haque, Katrin Sak   +9 more
doaj   +2 more sources

Gut Microbiota-Assisted Synthesis, Cellular Interactions and Synergistic Perspectives of Equol as a Potent Anticancer Isoflavone [PDF]

Pharmaceuticals, 2022
It is well known that, historically, plants have been an important resource of anticancer agents, providing several clinically approved drugs. Numerous preclinical studies have shown a strong anticancer potential of structurally different phytochemicals,
Hardeep Singh Tuli, Ajay Kumar, Katrin Sak, Diwakar Aggarwal, Dhruv Sanjay Gupta, Ginpreet Kaur, Kanupriya Vashishth, Kuldeep Dhama, Jagjit Kaur, Adesh K. Saini, Mehmet Varol, Esra Capanoglu, Shafiul Haque   +12 more
doaj   +2 more sources

A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack

IEEE Journal of the Electron Devices Society, 2021
AC positive bias temperature instability (PBTI) of germanium nMOSFETs with GeO2/Ge and Si-cap/Ge gate stack was investigated in this brief. AC-DC-AC alternating PBTI stress tests were conducted on both types of devices, the experiment data shows the ...
Rui Gao, Jigang Ma, Xiaoling Lin, Xiaowen Zhang, Yunfei En, Guoguang Lu, Yun Huang, Zhigang Ji, Hong Yang, Weidong Zhang, Jianfu Zhang   +10 more
doaj   +1 more source

Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

Journal of Information Display, 2021
As two-dimensional (2D) materials have a large surface to volume ratio, the stability of thin film transistors (TFTs) is likely to be lowered with air exposure.
Woonggi Hong, Dong Sik Oh, Sung-Yool Choi   +2 more
doaj   +1 more source

Pulsar Based Alternative Timing Source for Grid Synchronization and Operation

IEEE Access, 2020
The need for timing sources that are alternatives to GPS has been under consideration for years. The reliance of power systems instrumentation and control systems on GPS timing serves as the basis for the study reported in this paper.
He Yin, Yilu Liu, Peter L. Fuhr, Marissa Morales Rodriguez, Margaret Morganti, William Monday, Jason Richards, Sterling Sean Rooke   +7 more
doaj   +1 more source

Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

IEEE Journal of the Electron Devices Society, 2019
This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La2O3 dipole-doped N-type MOSCAP.
Fu-Yuan Jin, Ting-Chang Chang, Chien-Yu Lin, Jih-Chien Liao, Fong-Min Ciou, Yu-Shan Lin, Wei-Chun Hung, Kai-Chun Chang, Yun-Hsuan Lin, Yen-Cheng Chang, Ting-Tzu Kuo   +10 more
doaj   +1 more source

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Frontiers in Physics, 2020
The positive bias temperature instability (PBTI) reliability of buried InGaAs channel n-MOSFETs with an InP barrier layer and Al2O3 gate dielectric under medium field (2.7 MV/cm) and high field (5.0 MV/cm) are investigated in this paper.
Haiou Li, Kangchun Qu, Xi Gao, Yue Li, Yonghe Chen, Zhiping Zhou, Lei Ma, Fabi Zhang, Xiaowen Zhang, Tao Fu, Xingpeng Liu, Yingbo Liu, Tangyou Sun, Honggang Liu   +13 more
doaj   +1 more source

Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier

IEEE Journal of the Electron Devices Society, 2017
This paper investigates the reliability-tolerant design for ultra-thin-body (UTB) GeOI 6T SRAM cell and sense amplifiers. For UTB GeOI 6T SRAM cells, using high threshold voltage design significantly mitigates the read and hold static noise margin ...
Vita Pi-Ho Hu
doaj   +1 more source