Results 41 to 50 of about 868 (191)

High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering

IEEE Journal of the Electron Devices Society
In this work, we investigate the role of oxygen (O) on the performance of top-gate (TG) atomic-layer-deposited (ALD) oxide semiconductor transistors. The results show correlations between oxygen processing, electrical characteristics, and positive bias ...
Kai Jiang, Zhiyu Lin, Ziheng Wang, Chen Wang, Mengwei Si   +4 more
doaj   +1 more source

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Advanced Electronic Materials, Volume 11, Issue 4, April 2025.
In this work, the reliability of BTI in top‐gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous ...
Yifu Sun, Peng Lu, Lingyu Zhang, Yu Cao, Lan Bai, Li Ding, Jie Han, Chiyu Zhang, Maguang Zhu, Zhiyong Zhang   +9 more
wiley   +1 more source

Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models

, 2012
In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit.
Bukhori, M.F., Nayan, N.A., Asenov, A., Kamsani, N.A.   +3 more
core   +1 more source

As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI) [PDF]

Positive Bias Temperature Instability (PBTI) is poised to cause significant degradation to nFETs with deep scaling into nanometers. It is commonly modelled by a power law fitted with measured threshold voltage shift.
Ji, Z, Zhang, JF, Marsland, J, Zhang, WD, Gao, R   +4 more
core   +2 more sources

Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing

IEEE Journal of the Electron Devices Society
In this paper, we investigate the evolution of hydrogen (H) behavior in back-gated IGZO/HfO2 transistors subjected to low-temperature annealing (200 °C in air), focusing on its impact on initial electrical characteristics (Id-Vg) and ...
Liang Xiang, Gangping Yan, Hong Yang, Shangbo Yang, Gaobo Xu, Mingyang Sun, Guilei Wang, Huaxiang Yin, Xiaolei Wang, Jun Luo, Wenwu Wang   +10 more
doaj   +1 more source

Reliability challenges of gate dielectric materials in transistors

Information &Functional Materials, Volume 2, Issue 1, Page 62-92, March 2025.
We summarize the advantages and challenges of different dielectrics that are applicable to several mainstream channel materials, including Si, SiC, GaN, and 2D materials. The dielectrics materials include oxides such as SiO2, HfO2, and Al2O3 for conventional transistors, as well as fluorides, van der Waals insulators, and Perovskites, which are ...
Ting‐Wei Liu, Zhe Zhao, Ruyue Cao, Yue‐Yang Liu, Xiangwei Jiang   +4 more
wiley   +1 more source

Role of interface/border traps on the threshold voltage instability of SiC power transistors [PDF]

, 2023
In this paper the role of interface/border defects on the threshold voltage drift (ΔVTH) of SiC power MOSFETs has been investigated by means of slow and fast positive bias temperature instability (PBTI), hysteresis and conductance tests.
Volosov V., Tallarico A. N., Di Giovanni F., Imbruglia A., Fiegna C., Sangiorgi E., Cascino S., Saggio M.   +7 more
core   +1 more source

Microwave Emissivity Variations Across Ovda Regio, Venus

Journal of Geophysical Research: Planets, Volume 130, Issue 3, March 2025.
Abstract The surface composition of highland tesserae on Venus critically constrains the geologic and climate history of the planet. We examine one such highland, Ovda Regio, which contains tessera terrain as well as a rare festoon‐type volcano, both of which have unknown compositions.
Indujaa Ganesh, Martha S. Gilmore
wiley   +1 more source

A Comprehensive DC and AC PBTI Modeling Framework for HKMG n-MOSFETs

, 2017
A physics-based modeling framework is proposed to calculate the threshold voltage shift (Delta V-T) in planar high-k metal gate (HKMG) n-MOSFETs for positive bias temperature instability (PBTI).
MUKHOPADHYAY, S, GOEL, N, PARIHAR, N, MAHAPATRA, S, Narendra Parihar, Mukhopadhyay, Subhadeep, Subhadeep Mukhopadhyay, Mahapatra, Souvik, Parihar, Narendra, Goel, Nilesh, Nilesh Goel, Souvik Mahapatra   +11 more
core   +2 more sources

Temperature‐Driven Performance and Reliability Trade‐Offs in 7 nm FinFET‐Based Dynamic Comparators

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
Both circuit performance and long‐term reliability are significantly impacted by the combined effects of temperature‐induced drive current fluctuations and self‐heating in FinFET devices. The performance of a three‐stage rail‐to‐rail dynamic comparator based on a 7 nm FinFET is examined in this work, taking into account the effects of thermal changes ...
MD Badhesha, J. Ajayan, Asisa Kumar Panigrahy, Amit Krishna Dwivedi, Ravi Gangwar   +4 more
wiley   +1 more source