Results 31 to 40 of about 868 (191)
Discovery of a distinct superfamily of Kunitz-type toxin (KTT) from tarantulas. [PDF]
PLoS ONE, 2008 BACKGROUND: Kuntiz-type toxins (KTTs) have been found in the venom of animals such as snake, cone snail and sea anemone. The main ancestral function of Kunitz-type proteins was the inhibition of a diverse array of serine proteases, while toxic activities
Chun-Hua Yuan +6 more
doaj +1 more source
Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack
IEEE Journal of the Electron Devices Society, 2019 In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL).
Su-Keun Eom +3 more
doaj +1 more source
Advanced Materials, Volume 38, Issue 43, 3 August 2026.The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley +1 more source
IEEE AccessIn this study, the bias temperature instability (BTI) of peripheral complementary metal–oxide semiconductor devices in a cell-on-peri (COP) structure is investigated under cryogenic conditions. First, positive BTI (PBTI) in the nMOSFET is found to
Jung Rae Cho +12 more
doaj +1 more source
, 2012 Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are the two important reliability issues that degrade the SRAM cell stability over time. In this paper, we analyze the impact of NBTI and PBTI on 8T SRAM cells,
Kim Ming Ho +7 more
core +1 more source
Research progress and challenges in the reliability of SiGe channel CMOS device
Gongneng cailiao yu qijian xuebaoAs complementary metal-oxide-semiconductor (CMOS) technology scales down to the 5 nm node and beyond, SiGe channels have become a promising solution for high-performance p-type field-effect transistor (pFET) due to their superior hole mobility, with ...
Guoqixin HUANG +2 more
doaj +1 more source
Impact of negative and positive bias temperature stress on 6T-SRAM cells [PDF]
Advances in Radio Science, 2009 With introduction of high-k gate oxide materials, the degradation effect <i>Positive Bias Temperature Instability</i> (PBTI) is starting to play an important role.
S. Drapatz +2 more
doaj
Aggregate, Volume 6, Issue 11, November 2025.Organic electronic devices benefit from flexible, low‐cost fabrication, with heterojunction microstructures playing a key role in tuning exciton dynamics, charge transport, and multifunctionality. This review summarizes recent advances in heterojunction design, covering performance optimization, functional integration, and four key construction ...
Chaoyi Yan +7 more
wiley +1 more source
Self‐Healing Perovskite Solar Cells: Introduction, Recent Progresses and Perspective
SmartMat, Volume 6, Issue 4, August 2025.The self‐healing strategy is very promising for addressing the long‐term stabilities and potential Pb leakage of perovskite solar cells (PSCs). Here, we provide a comprehensive review on the research of self‐healing PSCs. The main challenges and long‐term perspective of this area are also discussed.
Ting Liu, Zhi‐Yong Yang
wiley +1 more source
IEEE Journal of the Electron Devices SocietyIn this paper, the frequency (f) dependence of trap generation in Si n-channel fin field-effect transistors (n-FinFETs) under AC positive bias temperature instability (PBTI) stress is investigated by fast direct-current current-voltage (DCIV) method and ...
Yunfei Shi +14 more
doaj +1 more source