Results 11 to 20 of about 868 (191)

A framework for defects in PBTI and hot carrier ageing [PDF]

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018
Both positive bias temperature instability (PBTI) and hot carrier ageing (HCA) are major challenges to the reliability of modern CMOS technologies. This work reviews the recent progresses in understanding the defects. An as-grown-generation (AG) framework is proposed, based on the energy profile, charging kinetics and generation.
Zhang, JF, Duan, M, Ji, Z, Zhang, WD
openaire   +3 more sources

Towards Understanding Interaction Between Hot Carrier Ageing and PBTI [PDF]

2020 China Semiconductor Technology International Conference (CSTIC), 2020
Early works on device ageing often focus on one source, while devices in a circuit suffer degradation from different sources. There are only limited information on the impact of ageing from one source on ageing from a different source. This work researches into the interaction of ageing induced by Hot Carriers with that by Positive Bias Temperature ...
Duan, M, Zhang, JF, Ji, Z, Zhang, WD
openaire   +2 more sources

Design of ring oscillator structures for measuring isolated NBTI and PBTI

2012 IEEE International Symposium on Circuits and Systems, 2012
Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency or threshold voltage shifts.
Kim, Tony Tae-Hyoung, Lu, Pong-Fei., Kim, Chris H.   +2 more
openaire   +3 more sources

Oxygen Plasma‐Treated Dielectric‐Channel Interface for BEOL‐Compatible IGZO TFTs with High Electrical Stability

Advanced Electronic Materials
Indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with high stability are highly desired for future memory devices, which demand high stabilities.
Shaocong Lv, Shuaiying Zheng, Xianglong Li, Tan Zhang, Baoqing Zhang, Huayu Feng, Fei Wang, Qian Xin, Yuxiang Li, Jiawei Zhang, Aimin Song   +10 more
doaj   +2 more sources

Impact of positive bias temperature instability (PBTI)

Integration, 2011
Memory circuits are playing a key role in complex multicore systems with both data and instructions storage and mailbox communication functions. There is a general concern that conventional SRAM cell based on the 6T structure could exhibit serious limitations in future CMOS technologies due to the instability caused by transistor mismatching as well as
Aymerich Capdevila, Nivard, Ganapathy, Shrikanth, Rubio Sola, Jose Antonio, Canal Corretger, Ramon, González Colás, Antonio María   +4 more
core   +5 more sources

A Comparative Study of NBTI and PBTI Using Different Experimental Techniques

IEEE Transactions on Electron Devices, 2016
Degradation in planar high-k metal gate p- and n-channel MOSFETs, respectively, under negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) stress is studied using different characterization methods. Ultrafast measure stress measure (UF-MSM) method with a measurement delay of a few microseconds is used to ...
Subhadeep Mukhopadhyay, Nilesh Goel, Souvik Mahapatra   +2 more
openaire   +3 more sources

Re-Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors. [PDF]

Adv Sci (Weinh)
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Trommer J, Martinez JP, He Y, Galderisi G, Pingen K, Oliveros-Mata ES, Tellis L, Cakirlar C, Beyer C, Sapui B, Knoch J, Hofmann K, Carrara S, Cantatore E, Lemme MC, O'Connor I, Kumar A, Heinzig A, Mikolajick T, Weber WM.   +19 more
europepmc   +2 more sources

Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
This study proposes a material design using ferroelectric‐antiferroelectric mixed‐phase HZO to achieve steep subthreshold swing and non‐hysteretic on‐current enhancement in morphotropic phase boundary field‐effect transistors (MPB‐FETs). For the first time, two‐stacked nanosheet GAA MPB‐FETs with optimized HZO are demonstrated, validating superior ...
Kim S, Kim HM, Kwon KR, Kwon D.
europepmc   +2 more sources

Positive-bias temperature instability (PBTI) of GaN MOSFETs [PDF]

2015 IEEE International Reliability Physics Symposium, 2015
We have investigated the stability of the gate stack of GaN n-MOSFETs under positive gate stress. Devices with a gate dielectric that consists of pure SiO 2 or a composite SiO 2 /Al 2 O 3 bilayer were studied. Our research has targeted the evolution of threshold voltage (V T ), subthreshold swing (S) and transconductance (g m ) after positive gate ...
Guo, Alex, del Alamo, Jesus A.
openaire   +3 more sources

Impact of Electron-Withdrawing Passivating Molecules on Perovskite Solar Cells. [PDF]

ChemSusChem
The work reviews the effect of electron‐withdrawing groups on the photoelectric performance and stability of perovskite solar cells (PSCs), mainly focusing on the mechanism by which the group improves the performance and film quality of PSCs. Interfacial instability—originating from defects, ion migration, and uncontrolled crystallization—remains a ...
Yang G, Dong K, Zhu L, Lei Y, Wang P, Shi N, Zheng L, Jiang X, Xiao JD.   +8 more
europepmc   +2 more sources