Results 21 to 30 of about 868 (191)

From Ferroelectric Material Optimization to Neuromorphic Devices

Advanced Materials, Volume 35, Issue 37, September 14, 2023., 2023
Ferroelectric materials combine a voltage driven switching mechanism with nonvolatility making them promising for nonvolatile devices. Here the material basics and the three different memory devices are described as a starting point for an in‐depth discussion of the current status of implementing ferroelectric devices for neuromorphic computing ...
Thomas Mikolajick, Min Hyuk Park, Laura Begon‐Lours, Stefan Slesazeck   +3 more
wiley   +1 more source

Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction [PDF]

Modelling of the interaction between Hot Carrier Aging (HCA) and Positive Bias Temperature Instability (PBTI) has been considered as one of the main challenges in nanoscale CMOS circuit design.
Groeseneken, G, Duan, M, Zhang, JC, Ji, Z, Zhang, JF, Hao, Y, Vigar, D, Kaczer, B, Asenov, A, Aitken, R, Benbakhti, B, Zhang, XF, Zhang, WD, Chandra, V   +13 more
core   +3 more sources

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

IEEE Journal of the Electron Devices Society, 2022
E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro ...
Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu, Cheng-Jun Huang, Yan-Kui Liang, You-Chen Weng, Edward Yi Chang   +6 more
doaj   +1 more source

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Integrasi RUP dan DSDM untuk Rancang Bangun Sistem Informasi Olahraga yang Komprehensif Studi Kasus: Pengurus Besar Taekwondo Idonesia

Jurnal Sisfokom, 2017
Dalam paper ini, penulis membahas beberapa isu metodologi terkait dengan pembangunan sistem informasi olahraga, dan menggambarkan mafaat yang diberikan kedapa organisasi olahraga terhadap penerapan sistem informasi dalam operasional organisasi.
Muhammad Rizky Pribadi
doaj   +1 more source

Mitigating the Impact of NBTI and PBTI Degradation

Global Journal of Technology and Optimization, 2016
Modern CMOS devices encounter a major problem that alters the threshold voltages of the NMOS and PMOS. Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are common ageing phenomena observed in PMOS and NMOS devices, respectively. Due to operating temperature and stress time, NBTI and PBTI create a decrease in
Bairy B, Craig TS
openaire   +1 more source

Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

Crystals, 2020
GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devices ...
Milan Ťapajna
doaj   +1 more source

Perancangan Ulang Desain Website Pengurus Besar Taekwondo Indonesia (PBTI) [PDF]

, 2022
Taekwondo merupakan seni beladiri yang berasal dari Korea, seiring berkembangnya taekwondo, beladiri ini pun tersebar sampai ke Indonesia, berbagai organisasi mulai terbentuk dengan tujuan memajukan taekwondo Indonesia ,oleh karena itu PBTI diberikan ...
Karuna, Bryan
core  

Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs

Journal of Low Power Electronics and Applications, 2020
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers.
Esteban Guevara, Victor Herrera-Pérez, Cristian Rocha, Katherine Guerrero   +3 more
doaj   +1 more source

Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

, 2021
In this article, threshold-voltage VTH instabilities under positive gate voltage stress VGStress in GaN-on-Si devices are thoroughly investigated. Measurement-stress-measurement pBTI technique using ultrafast VG ramp was applied in this study.
Modica R., Gaillard F., Viey A. G., Meneghini M., Gwoziecki R., Ghibaudo G., Iucolano F., Gerrer L., Garros X., Plissonnier M., Krakovinsky A., Meneghesso G., Jaud M. -A., Martin S., Biscarrat J., Cluzel J., Vandendaele W., Garros, X., Vandendaele, W., Meneghini, M., Ghibaudo, G., Krakovinsky, A., Jaud, M.-A., Meneghesso, G., Gerrer, L., Viey, A., Plissonnier, M., Gaillard, F., Martin, S., Biscarrat, J., Iucolano, F., Gwoziecki, R., Cluzel, J., Modica, R., R. Gwoziecki, L. Gerrer, J. Cluzel, G. Meneghesso, M. Plissonnier, R. Modica, A. G. Viey, M. Meneghini, F. Gaillard, G. Ghibaudo, J. Biscarrat, A. Krakovinsky, X. Garros, F. Iucolano, M.-A. Jaud, W. Vandendaele, S. Martin   +50 more
core   +2 more sources