Results 51 to 60 of about 868 (191)

A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
In this paper, various D flip‐flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional‐bridging FF (CBFF)‐S, self‐shut‐off pulsed ...
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal, Shashikant Patil   +5 more
wiley   +1 more source

Beyond Flexible: Unveiling the Next Era of Flexible Electronic Systems

Advanced Materials, Volume 36, Issue 51, December 19, 2024.
Flexible electronics are essential in various fields like wearables, healthcare, and environmental sensing due to their flexibility, lightweight construction, and low profile. These systems conform to diverse surfaces, enhancing or replacing bulky instruments in many applications.
Min Sung Kim, Amani S. Almuslem, Wedyan Babatain, Rabab R. Bahabry, Uttam K. Das, Nazek El‐Atab, Mohamed Ghoneim, Aftab M. Hussain, Arwa T. Kutbee, Joanna Nassar, Nadeem Qaiser, Jhonathan P. Rojas, Sohail F. Shaikh, Galo A. Torres Sevilla, Muhammad M. Hussain   +14 more
wiley   +1 more source

Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET

, 2015
In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1-xAs FinFET with varying Indium (x = 0.53, 0.70) percentage and quantization [bulk, quantum well (QW)].
DATTA, S, Mahapatra, Souvik, Datta, Suman, Thathachary, Arun V., Agrawal, Nidhi, THATHACHARY, AV, MAHAPATRA, S, AGRAWAL, N   +7 more
core   +1 more source

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

, 2021
International audienceIn this study, we investigate the difference between ID(VG) and C(VG) pBTI shifts on GaN-on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (VGStress) and temperatures (T).
A.G. Viey, J. Biscarrat, Vandendaele, W., Meneghini, M., A. Krakovinsky, R. Gwoziecki, Krakovinsky, A., F. Iucolano, J. Cluzel, Viey, A.G., Jaud, M.-A., Meneghesso, G., V. Sousa, M.-A. Jaud, Coignus, J., G. Meneghesso, Gaillard, F., Ghibaudo, Gérard, Martin, S., Sousa, V., J. Coignus, Biscarrat, J., Iucolano, F., Gwoziecki, R., R. Modica, M. Meneghini, W. Vandendaele, Cluzel, J., F. Gaillard, Modica, R., G. Ghibaudo, S. Martin   +31 more
core   +2 more sources

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Advanced Electronic Materials, Volume 10, Issue 11, November 2024.
This study investigates double‐gate chemical vapor deposition (CVD)‐grown monolayer molybdenum disulfide (1L‐MoS2) field‐effect‐transistors (FETs) and elucidates the mechanisms for improvements compared to single top‐gated devices. It also reports on the impact of equivalent oxide thickness (EOT) scaling on subthreshold swing (SS) and gate hysteresis ...
Naim Hossain Patoary, Fahad Al Mamun, Jing Xie, Tibor Grasser, Ivan Sanchez Esqueda   +4 more
wiley   +1 more source

PBTI in HKMG nMOS Transistors-Effect of Width, Layout, and Other Technological Parameters

, 2017
This paper discusses in detail the effects of transistor width, layout, and technological parameters like gate dielectric and Lanthanum capping layer thickness on positive bias temperature instability (PBTI) of nMOS transistors fabricated using 28-nm ...
RAO, VR, Nihar Ranjan Mohapatra, Pardeep Duhan, MOHAPATRA, NR, V. Ramgopal Rao, DUHAN, P   +5 more
core   +1 more source

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

IET Power Electronics, Volume 17, Issue 15, Page 2393-2404, 25 November 2024.
This article presents a detailed investigation of the threshold voltage degradation of commercial SiC MOSFETs due to the application of high temperature and DC bias stress in a more comprehensive voltage range and a higher temperature range. Abstract Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs.
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao   +3 more
wiley   +1 more source

Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

, 2015
We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography.
K. Henry, C. Eichfeld, Stemmer, S., R. Pandey, V. Chobpattana, Mahapatra, S., H. Liu, S. Mahapatra, Kuhn, M., Eichfeld, C., Chobpattana, V., M. Labella, S. Datta, Liu, H., Agrawal, N., J. Maier, Pandey, R., Henry, K., Labella, M., M. Kuhn, Wang, K., Maier, J., N. Agrawal, S. Stemmer, Datta, S., K. Wang   +25 more
core   +1 more source

Research progress and application of high efficiency organic solar cells based on benzodithiophene donor materials

Exploration, Volume 4, Issue 4, August 2024.
This summary diagram comprehensively and reasonably reviews the evolution of BDT‐based donor materials over the last 20 years by subdividing the molecular design strategies of main‐chain engineering, side‐chain engineering as well as other engineering based on the detailed molecular structure of BDT‐based polymer donors and small molecule donors ...
Congqi Lin, Ruixiang Peng, Jingyu Shi, Ziyi Ge   +3 more
wiley   +1 more source

Enhanced power performance and threshold voltage stability in quaternary InAlGaN/GaN MIS-HEMTs on Si with gate field plate

Discover Electronics
This work presents GaN-on-Si metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) featuring a quaternary InAlGaN barrier and gate field plate (GFP) for power device applications.
Shivendra Kr. Rathaur, Cheng-Jun Ma, Tsung-Ying Yang, Abhisek Dixit, Edward Yi Chang   +4 more
doaj   +1 more source