Results 61 to 70 of about 868 (191)

The Role of Grain Boundaries in Organic–Inorganic Hybrid Perovskite Solar Cells and its Current Enhancement Strategies: A Review

ENERGY &ENVIRONMENTAL MATERIALS, Volume 7, Issue 4, July 2024.
Two remaining issues on GBs: 1) The unclear role in charge carrier dynamics due to their component complexity/defect tolerance nature and the insufficiency in testing accuracy and 2) the ignored distinctions between GB and surface additives for the fact that GBs are homogeneous junctions with narrow/slender space, while surface is heterogeneous ...
Jindan Zhang, Shicheng Tang, Mengqi Zhu, Zhenghong Li, Zhibin Cheng, Shengchang Xiang, Zhangjing Zhang   +6 more
wiley   +1 more source

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks

, 2014
We propose a physical model for the fast component (
Bersuker, Gennadi, Matthews, Kenneth, PADOVANI, ANDREA, Veksler, Dmitry, LARCHER, Luca, VANDELLI, LUCA   +5 more
core   +1 more source

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source

Review—Extremely Thin Amorphous Indium Oxide Transistors

Advanced Materials, Volume 36, Issue 9, March 1, 2024.
Reducing the thickness of indium oxide, enabled by atomic layer deposition (ALD) process, can tune its material properties to achieve high performance devices beyond the capabilities of conventional oxide semiconductors. In this work, the history leading to the re‐emergence of indium oxide, its fundamental material properties, growth techniques with a ...
Adam Charnas, Zhuocheng Zhang, Zehao Lin, Dongqi Zheng, Jie Zhang, Mengwei Si, Peide D. Ye   +6 more
wiley   +1 more source

The Response Frequency of Interface Traps Using a Dual-Frequency Charge-Pumping Method and Its Correlation With 1/f Noise

IEEE Journal of the Electron Devices Society
This study shows a novel dual-frequency charge-pumping method, developed to quantitatively characterize the frequency response characteristics of interface traps at the HfO2/Si interface.
Yi Jiang, Luping Wang, Kai Chen, Rui Su, Luyu Yang, Dawei Gao, Junkang Li, Ran Cheng, Rui Zhang   +8 more
doaj   +1 more source

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

2025 IEEE International Reliability Physics Symposium (IRPS)
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device transfer characteristics and enhances electron trapping during Positive Bias Temperature Instability (PBTI) tests ...
Vishwakarma, Kavita, Lee, Kookjin, Kruv, Anastasiia, Chasin, Adrian, van Setten, Michiel J., Pashartis, Christopher, Orkut Okudur, Oguzhan, Gonzalez, Mario, Rassoul, Nouredine, Belmonte, Attilio, Kaczer, Ben   +10 more
openaire   +4 more sources

PbTiO₃纳米线的合成及其光致发光特性研究

四川大学学报. 自然科学版, 2005
采用水热合成技术,以钛酸四丁酯和三水醋酸铅为原料,NaOH为矿化剂,合成了直径约12nm的钙钛矿结构钛酸铅纳米线.通过X射线衍射,扫描电子显微镜,X射线光电子能谱等技术对纳米线的形貌和成分进行了表征并研究了PbTi O3纳米线的光致发光特性.
顾豪爽, 郑凯泓, 胡永明, 胡正龙, 尤晶, 袁颖   +5 more
doaj  

The Impact of Magnetic Field on Defective FDSOI and FinFET Devices

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This article explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multiphysics technology CAD (TCAD), we model the impact of static and transient magnetic fields on ...
Munazza Sayed, Hussam Amrouch
doaj   +1 more source

Density and energy level of near-interface trap estimated by analysis of threshold voltage shift due to positive bias stress in GaN planar MOSFETs with SiO2 gate dielectric

Applied Physics Express
Bias voltage and temperature dependence of positive shift of threshold voltage ( V _TH ) by applying positive bias stress to GaN planar-gate metal-oxide-semiconductor field-effect transistors with gate dielectric (SiO _2 ) formed by remote-plasma ...
Yuki Ichikawa, Katsunori Ueno, Tsurugi Kondo, Ryo Tanaka, Shinya Takashima, Jun Suda   +5 more
doaj   +1 more source

New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High-k/IL Gate Dielectric

, 2018
In this letter, a strategy to minimize the error in lifetime projections using a positive bias temperature instability (PBTI) test has been proposed.
Kang, CY, Lee, BH, Jo, M, Sohn, CW, Jeong, YH, Lee, SK, Lee, JC   +6 more
core   +1 more source