Results 81 to 90 of about 868 (191)

Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

, 2014
session posterInternational audienceThis paper deals with AC/DC effect on nMOS TDDB (Time Dependent Dielectric Breakdown) and PBTI (Positive Bias Temperature Instability) using suitable OTF (on the Fly) monitoring methodologies.
Rafik, M., Bezza, A., Mora, P., Federspiel, X., X. Federspiel, D. Roy, P. Mora, G. Ghibaudo, Ghibaudo, G., Roy, D., A. Bezza, M. Rafik   +11 more
core   +1 more source

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

ACS Applied Electronic Materials
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40% In (metal ratio) suffers from degradation under forming gas anneal (FGA) and hydrogen (H) driven positive bias temperature instability (PBTI).
Kruv, Anastasiia, van Setten, Michiel J., Chasin, Adrian, Matsubayashi, Daisuke, Dekkers, Hendrik, Pavel, Alexandru, Wan, Yiqun, Trivedi, Kruti, Rassoul, Nouredine, Li, Jie, Jiang, Yuchao, Subhechha, Subhali, Pourtois, Geoffrey, Belmonte, Attilio, Sankar Kar, Gouri   +14 more
openaire   +3 more sources

Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al<inf>2</inf>O<inf>3</inf> IL

, 2017
This work for the first time reports Positive Bias Temperature Instability (PBTI) on Ge n-channel metal oxide semiconductor Field Effect Transistors (nFETs) with a stable and ultrathin (5 Å) Al2O3 IL Inter Layer (IL) using ultrafast (∼μs)
Shraddha Kothari, Subhadeep Mukhopadhyay, Mukhopadhyay, Subhadeep, Chandan Joishi, Mahapatra, Souvik, Saurabh Lodha, Ghosh, Sayantan, Souvik Mahapatra, Kothari, Shraddha, Lodha, Saurabh, Sayantan Ghosh, Joishi, Chandan   +11 more
core   +1 more source

Logical Resolving-Based Methodology for Efficient Reliability Analysis. [PDF]

Micromachines (Basel), 2023
Tang Z, Li C, You H, Liu X, Wang Y, Dai Y, Bai G, Lin X.   +7 more
europepmc   +1 more source

On the influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT

, 2019
session 7A: WB GaNInternational audienceIn this paper we explore the influence of the fully recessed gate length on Vth instabilities with ultra-fast pBTI measurements (< 10µs) on GaN-on-Si E-mode MOSc ...
Gwoziecki, Romain, Jaud, Marie-Anne, Ghibaudo, Gérard, Torres, Alphonse, Gaillard, Frédéric, Meneghesso, Gaudenzio, Viey, Abygael, Modica, Roberto, Lucolano, Ferdinando, Meneghini, Matteo, Plissonnier, Marc, Vandendaele, William   +11 more
core  

Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization. [PDF]

Materials (Basel), 2023
Fathipour M, Xu Y, Rana M.
europepmc   +1 more source

Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs

, 2017
session 2B: Process IntegrationInternational audienceIn this paper, the Bias Temperature Instability effects of Lanthanum (La) and Aluminum (Al) incorporation, used for threshold voltage adjustment by dipole formation at the SiO2/HfON interface into the ...
Giovanni Romano, Alain Toffoli, Romano, Giovanni, Pushpendra Kumar, Reimbold, Gilles, Mohamad, Blend, Ghibaudo, G., Carlos Suarez Segovia, Gilles Reimbold, Xavier Garros, Blend Mohamad, Leroux, Charles, Domengie, Florian, Toffoli, Alain, Florian Domengie, Charles Leroux, Kumar, Pushpendra, G. Ghibaudo, Segovia, Carlos Suarez, Garros, Xavier   +19 more
core   +1 more source

铅基铁电薄膜低温结晶和单层厚度提高及其性能研究

四川大学学报. 自然科学版, 2005
非致冷红外焦平面阵列是小型、低功耗和高可靠性红外成像系统的关键组成部分,是国际的研究热点之一.铅基铁电薄膜是制备非致冷红外焦平面阵列的重要材料.然而,在湿化学方法制备铅基铁电薄膜中,有两个因素影响着铁电薄膜与微电子电路的集成一是铁电薄膜的结晶温度较高,一般在550～700℃之间,这一温度超过了常规微电子工艺的温度,导致铁电薄膜工艺与微电子工艺的兼容性差;二是一次成膜厚度薄,一般在0.1～0.2μm之间,大于此厚度的薄膜必需采用多次甩胶-预热处理过程,致使制膜周期冗长 ...
吴小清, 任巍, 姚熹
doaj  

High-Molecular-Weight Polymer Donors Based on Bithiophene Imide for High-Efficiency and Durable All-Polymer Solar Cells

High-molecular-weight (high-MW) polymer semiconductors are pivotal in advancing all-polymer solar cells (all-PSCs), known for their excellent device stability and mechanical resilience.
Kim, Bumjoon J., Jeong, Sang Young, Woo, Han Young, Lu, Junyi, Zhang, Xiage, Chen, Jiahao, Lee, Jin-Woo, Liu, Bin, Bai, Qingqing, Guo, Xugang, Xu, Changjing, Yang, Jie, Sun, Huiliang, Gamez-Valenzuela, Sergio   +13 more
core   +1 more source

Voltage dependent degradation of HfSiON/SiO2 nMOSFETs under positive bias temperature instability

, 2018
This paper investigates voltage-dependent degradation of HfSiON/SiO2 nMOSFETs under conditions of positive bias temperature instability (PBTI), and proposes a PBTI degradation model that can use data from acceleration tests to predict device lifetime ...
Kim, H, Kim, C, Kang, B
core   +1 more source