Results 71 to 80 of about 868 (191)
四川大学学报. 自然科学版, 2005 (1-x)PbZn1/3Nb2/3O3-xPbTi O3(PZNT)晶体是弛豫铁电体PbZn1/3Nb2/3O3(PZN)与普通铁电体PbTi O3(PT)在0≤x≤0.2内形成的固溶体.钙钛矿结构的PZNT晶体具有优异的压电性能,在声纳、微位移器、医用超声成像等领域具有广阔的应用前景.作者分析了PZNT单晶压电性能对晶体组分的依赖关系,讨论了不同生长工艺对晶体性能的影响,解释了PZNT单晶在准同型相界附近具有优异性能的原因.
金敏, 徐家跃
doaj
IEEE AccessGaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan +4 more
doaj +1 more source
四川大学学报. 自然科学版, 2005 作者简单地介绍了第一性原理计算在几种常见的钙钛矿铁电材料的表面结构研究中的应用.计算结果显示,不同材料的表面弛豫和褶皱度不完全相同.对于BaTi O3,PbTi O3和PbZrO3表面最大的离子弛豫出现在最外的终止层上,但是对SrTi O3和SrHfO3表面最大离子弛豫出现在第二层.对于SrZrO3/SrTi O3超晶格的计算表明,可以利用界面效应产生人工铁电性.
王春雷
doaj
Scratch-induced damage of doped DLC and MoS2 coatings—Deep symbolic analysis
FrictionUnderstanding contact-induced damage is of paramount importance in the analysis of the lifespan and performance of surface coatings. In this work, we investigate the effects of dopants and interlayers on the structural durability of diamond-like carbon ...
Ming Liu +7 more
doaj +1 more source
Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTI
, 2019 The effect of HfSiON thickness on electron trap distributions under positive bias temperature instability (PBTI) was investigated in HfSiON/SiO2 nMOSFET. Trap distributions of HfSiON/SiO2 nMOSFET were observed by charging and discharging electrons at pre-
Gi-Youn Roh +10 more
core +1 more source
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
IEEE Journal of the Electron Devices SocietyIn this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae +2 more
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Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT
, 2019 International audienceIn this paper, we explore the influence of the fully recessed gate length on threshold voltage instabilities. The study has been performed by the use of ultra-fast pBTI measurements on GaN-on-Si E-mode MOSc-HEMTs, as well as TCAD ...
Modica R. +35 more
core +1 more source
On-Chip Age Estimation Using Machine Learning
IEEE AccessThe semiconductor supply chain industry is spread worldwide to reduce costs and meet the high demand for integrated circuits (ICs) in electronic systems.
Turki Alnuayri +2 more
doaj +1 more source
An Experimental Perspective of Trap Generation Under BTI Stress
, 2015 A gated-diode or direct current IV method is used to characterize trap generation (TG) under negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBTI) stress in different planar high-k metal gate p-channel and n ...
MUKHOPADHYAY, S +3 more
core +1 more source
Effect of NBTI/PBTI aging and process variations on write failures in MOSFET and FinFET flip-flops
, 2015 The assessment of noise margins and the related probability of failure in digital cells has growingly become essential, as nano-scale MOSFET and FinFET technologies are confronting reliability issues caused by aging mechanisms, such as NBTI and PBTI, and
MASTRANDREA, ANTONIO +2 more
core +1 more source