Results 21 to 30 of about 102 (93)

Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

IEEE Journal of the Electron Devices Society
In this paper, the frequency (f) dependence of trap generation in Si n-channel fin field-effect transistors (n-FinFETs) under AC positive bias temperature instability (PBTI) stress is investigated by fast direct-current current-voltage (DCIV) method and ...
Yunfei Shi, Hao Chang, Hong Yang, Qiangzhu Zhang, Qianqian Liu, Bo Tang, Longda Zhou, Zhigang Ji, Junjie Li, Xiaobin He, Junfeng Li, Huaxiang Yin, Xiaolei Wang, Jun Luo, Wenwu Wang   +14 more
doaj   +1 more source

Research progress and challenges in the reliability of SiGe channel CMOS device

Gongneng cailiao yu qijian xuebao
As complementary metal-oxide-semiconductor (CMOS) technology scales down to the 5 nm node and beyond, SiGe channels have become a promising solution for high-performance p-type field-effect transistor (pFET) due to their superior hole mobility, with ...
Guoqixin HUANG, Yiming QU, Choonghyun LEE   +2 more
doaj   +1 more source

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Advanced Electronic Materials, Volume 11, Issue 4, April 2025.
In this work, the reliability of BTI in top‐gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous ...
Yifu Sun, Peng Lu, Lingyu Zhang, Yu Cao, Lan Bai, Li Ding, Jie Han, Chiyu Zhang, Maguang Zhu, Zhiyong Zhang   +9 more
wiley   +1 more source

Reliability challenges of gate dielectric materials in transistors

Information &Functional Materials, Volume 2, Issue 1, Page 62-92, March 2025.
We summarize the advantages and challenges of different dielectrics that are applicable to several mainstream channel materials, including Si, SiC, GaN, and 2D materials. The dielectrics materials include oxides such as SiO2, HfO2, and Al2O3 for conventional transistors, as well as fluorides, van der Waals insulators, and Perovskites, which are ...
Ting‐Wei Liu, Zhe Zhao, Ruyue Cao, Yue‐Yang Liu, Xiangwei Jiang   +4 more
wiley   +1 more source

Temperature‐Driven Performance and Reliability Trade‐Offs in 7 nm FinFET‐Based Dynamic Comparators

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
Both circuit performance and long‐term reliability are significantly impacted by the combined effects of temperature‐induced drive current fluctuations and self‐heating in FinFET devices. The performance of a three‐stage rail‐to‐rail dynamic comparator based on a 7 nm FinFET is examined in this work, taking into account the effects of thermal changes ...
MD Badhesha, J. Ajayan, Asisa Kumar Panigrahy, Amit Krishna Dwivedi, Ravi Gangwar   +4 more
wiley   +1 more source

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source

A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
In this paper, various D flip‐flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional‐bridging FF (CBFF)‐S, self‐shut‐off pulsed ...
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal, Shashikant Patil   +5 more
wiley   +1 more source

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Advanced Electronic Materials, Volume 10, Issue 11, November 2024.
This study investigates double‐gate chemical vapor deposition (CVD)‐grown monolayer molybdenum disulfide (1L‐MoS2) field‐effect‐transistors (FETs) and elucidates the mechanisms for improvements compared to single top‐gated devices. It also reports on the impact of equivalent oxide thickness (EOT) scaling on subthreshold swing (SS) and gate hysteresis ...
Naim Hossain Patoary, Fahad Al Mamun, Jing Xie, Tibor Grasser, Ivan Sanchez Esqueda   +4 more
wiley   +1 more source

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae, Ho-Young Cha, Hyungtak Kim   +2 more
doaj   +1 more source

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

IET Power Electronics, Volume 17, Issue 15, Page 2393-2404, 25 November 2024.
This article presents a detailed investigation of the threshold voltage degradation of commercial SiC MOSFETs due to the application of high temperature and DC bias stress in a more comprehensive voltage range and a higher temperature range. Abstract Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs.
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao   +3 more
wiley   +1 more source