Results 31 to 40 of about 102 (93)

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

The Role of Grain Boundaries in Organic–Inorganic Hybrid Perovskite Solar Cells and its Current Enhancement Strategies: A Review

ENERGY &ENVIRONMENTAL MATERIALS, Volume 7, Issue 4, July 2024.
Two remaining issues on GBs: 1) The unclear role in charge carrier dynamics due to their component complexity/defect tolerance nature and the insufficiency in testing accuracy and 2) the ignored distinctions between GB and surface additives for the fact that GBs are homogeneous junctions with narrow/slender space, while surface is heterogeneous ...
Jindan Zhang, Shicheng Tang, Mengqi Zhu, Zhenghong Li, Zhibin Cheng, Shengchang Xiang, Zhangjing Zhang   +6 more
wiley   +1 more source

Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing

IEEE Journal of the Electron Devices Society
In this paper, we investigate the evolution of hydrogen (H) behavior in back-gated IGZO/HfO2 transistors subjected to low-temperature annealing (200 °C in air), focusing on its impact on initial electrical characteristics (Id-Vg) and ...
Liang Xiang, Gangping Yan, Hong Yang, Shangbo Yang, Gaobo Xu, Mingyang Sun, Guilei Wang, Huaxiang Yin, Xiaolei Wang, Jun Luo, Wenwu Wang   +10 more
doaj   +1 more source

Review—Extremely Thin Amorphous Indium Oxide Transistors

Advanced Materials, Volume 36, Issue 9, March 1, 2024.
Reducing the thickness of indium oxide, enabled by atomic layer deposition (ALD) process, can tune its material properties to achieve high performance devices beyond the capabilities of conventional oxide semiconductors. In this work, the history leading to the re‐emergence of indium oxide, its fundamental material properties, growth techniques with a ...
Adam Charnas, Zhuocheng Zhang, Zehao Lin, Dongqi Zheng, Jie Zhang, Mengwei Si, Peide D. Ye   +6 more
wiley   +1 more source

Enhanced power performance and threshold voltage stability in quaternary InAlGaN/GaN MIS-HEMTs on Si with gate field plate

Discover Electronics
This work presents GaN-on-Si metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) featuring a quaternary InAlGaN barrier and gate field plate (GFP) for power device applications.
Shivendra Kr. Rathaur, Cheng-Jun Ma, Tsung-Ying Yang, Abhisek Dixit, Edward Yi Chang   +4 more
doaj   +1 more source

Logical Resolving-Based Methodology for Efficient Reliability Analysis. [PDF]

Micromachines (Basel), 2023
Tang Z, Li C, You H, Liu X, Wang Y, Dai Y, Bai G, Lin X.   +7 more
europepmc   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

Improving Performance of Al₂O₃/AlN/GaN MIS HEMTs via In Situ N₂ Plasma Annealing. [PDF]

Micromachines (Basel), 2023
Sun M, Wang L, Zhang P, Chen K.
europepmc   +1 more source

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique. [PDF]

Nanomaterials (Basel), 2023
Chang H, Wang G, Yang H, Liu Q, Zhou L, Ji Z, Yu R, Wu Z, Yin H, Du A, Li J, Luo J, Zhao C, Wang W.   +13 more
europepmc   +1 more source

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. [PDF]

Nat Electron, 2022
Knobloch T, Uzlu B, Illarionov YY, Wang Z, Otto M, Filipovic L, Waltl M, Neumaier D, Lemme MC, Grasser T.   +9 more
europepmc   +1 more source