Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers. [PDF]
Micromachines (Basel)O'Sullivan B +9 more
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Integration and electrical evaluation of WS<sub>2</sub> and MoS<sub>2</sub> fets in a 300 mm pilot line. [PDF]
Discov ElectronSchram T +15 more
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The Understanding and Compact Modeling of Reliability in Modern Metal-Oxide-Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms. [PDF]
Micromachines (Basel)Sun Z, Chen S, Zhang L, Huang R, Wang R.
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A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics. [PDF]
Nanomaterials (Basel)Shangguan Q, Lv Y, Jiang C.
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In<sub>2</sub>O<sub>3</sub>: An Oxide Semiconductor for Thin-Film Transistors, a Short Review. [PDF]
MoleculesAvis C, Jang J.
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Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling. [PDF]
Micromachines (Basel)Bravaix A +3 more
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A Review of Reliability in Gate-All-Around Nanosheet Devices. [PDF]
Micromachines (Basel)Wang M.
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First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation. [PDF]
Nano ConvergHan C +7 more
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Miniaturization of CMOS. [PDF]
Micromachines (Basel), 2019 Radamson HH +15 more
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Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices. [PDF]
Proc Math Phys Eng Sci, 2016 Wimmer Y +4 more
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