Results 71 to 80 of about 102 (93)
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IEEE Transactions on Electron Devices, 2014
We propose a physical model for the fast component ( \( s) of the positive bias temperature instability (PBTI) process in SiO x /HfO2 gate-stacks. The model is based on the electron-phonon interaction governing the trapping/emission of injected electrons at the preexisting defects in the dielectric stack.
VANDELLI, LUCA +5 more
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We propose a physical model for the fast component ( \( s) of the positive bias temperature instability (PBTI) process in SiO x /HfO2 gate-stacks. The model is based on the electron-phonon interaction governing the trapping/emission of injected electrons at the preexisting defects in the dielectric stack.
VANDELLI, LUCA +5 more
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2020
In this paper, for the first time, the nTFET reliability and stability have been studied against the adverse effect of positive bias temperature instability (PBTI) for three different device architectures, viz. elevated drain-(ED-), elevated source-(ES-) and elevated source–drain-(ESD-) TFETs, in terms of threshold voltage (VT) shift, on-current/off ...
Suman Das +2 more
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In this paper, for the first time, the nTFET reliability and stability have been studied against the adverse effect of positive bias temperature instability (PBTI) for three different device architectures, viz. elevated drain-(ED-), elevated source-(ES-) and elevated source–drain-(ESD-) TFETs, in terms of threshold voltage (VT) shift, on-current/off ...
Suman Das +2 more
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IEEE Electron Device Letters, 2008
The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics.
Woei-Cherng Wu +6 more
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The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics.
Woei-Cherng Wu +6 more
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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), 2019
In 0.53 Ga 0.47 As as a high mobility channel material is a strong candidate for nFETs, which, however, suffers severe PBTI reliability. In this work, we show the failure of conventional method for its lifetime prediction and demonstrate the required paradigm shift in characterizing such technology. Then a comprehensive investigation on PBTI is carried
Zhigang Ji, Xiong Zhang, Jianfu Zhang
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In 0.53 Ga 0.47 As as a high mobility channel material is a strong candidate for nFETs, which, however, suffers severe PBTI reliability. In this work, we show the failure of conventional method for its lifetime prediction and demonstrate the required paradigm shift in characterizing such technology. Then a comprehensive investigation on PBTI is carried
Zhigang Ji, Xiong Zhang, Jianfu Zhang
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Chinese Physics B, 2015
The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125
Lu-Wei Qi +13 more
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The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125
Lu-Wei Qi +13 more
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2022 International Conference on IC Design and Technology (ICICDT), 2022
Lulu Chou +5 more
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Lulu Chou +5 more
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Positive Bias Temperature Instability of SiC-MOSFETs Induced by Switching Operation (AC-PBTI)
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials, 2016E. Murakami +3 more
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