Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices. [PDF]
Calzolaro A, Mikolajick T, Wachowiak A.
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Implementation of Aging Mechanism Analysis and Prediction for XILINX 7-Series FPGAs with a 28-nm Process. [PDF]
Li Z, Huang Z, Wang Q, Wang J, Luo N.
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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. [PDF]
Mukherjee K +13 more
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Near-zero hysteresis van der Waals MnAl<sub>2</sub>S<sub>4</sub> field-effect transistors with low minimal threshold voltage degradation and high thermal stability. [PDF]
Sattari-Esfahlan SM +9 more
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Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors. [PDF]
Bahrami M +14 more
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Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. [PDF]
Cao Y +10 more
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Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small Hysteresis. [PDF]
Sattari-Esfahlan SM +8 more
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Enhanced soft error resilience of NBTI-tolerant dual mode Schmitt trigger circuit. [PDF]
Kannaujiya A, Shah AP.
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Cross Comparison Between Thermal Cycling and High Temperature Stress on I/O Connection Elements. [PDF]
Dhyani M +3 more
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Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors. [PDF]
Stampfer B +3 more
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