Results 171 to 180 of about 868 (191)

Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015
This paper investigates the impacts of Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) on the stability and performance of Ultra-Thin-Body (UTB) GeOI 6T SRAM cells compared with the SOI counterparts. Worst case stress scenarios for Read and Write operations are analyzed.
Vita Pi-Ho Hu, Ming-Long Fan, Pin Su, Ching-Te Chuang   +3 more
openaire   +1 more source

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

Microelectronics Reliability, 2007
Abstract Positive voltage instabilities are studied for Nmos transistors with hafnium-based high-κ gate stacks. Using an optimized dedicated fast measurement setup, dynamic transient measurements of drain current are performed over more than ten decades of time. The two main phenomena involved, a reversible one known as hysteresis and a nonreversible
Reimbold, G., Mitard, J., Garros, X., Leroux, Cédric, Ghibaudo, G., Martin, F.   +5 more
openaire   +3 more sources

On-Chip NBTI and PBTI Tracking through an All-Digital Aging Monitor Architecture

2013
Although adaptive strategies based on the Measure-and-Control (M&C) design paradigm have been proven to be effective methods to achieve aging resilient circuits, their implementation requires accurate monitoring architectures and integrated aging sensors.
KARIMIYAN ALIDASH, HOSSEIN, CALIMERA, ANDREA, MACII, Enrico, PONCINO, MASSIMO, MACII, Alberto   +4 more
openaire   +2 more sources

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo   +3 more
openaire   +1 more source

The Effects of NBTI and PBTI on SRAM Characteristics

2024 IEEE 22nd Student Conference on Research and Development (SCOReD)
Asiah Lokman, Syed Shahril Bin Syed Nasir, Hanim Hussin, Maizan Muhamad, Nur Sabrina Binti Reezal, Nurhafizah Burham, Anees Abdul Aziz, Nurul Ezaila   +7 more
openaire   +1 more source

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

2021 IEEE International Electron Devices Meeting (IEDM), 2021
A. Chasin, J. Franco, K. Triantopoulos, H. Dekkers, N. Rassoul, A. Belmonte, Q. Smets, S. Subhechha, D. Claes, M. J. van Setten, J. Mitard, R. Delhougne, V. Afanas'ev, B. Kaczer, G. S. Kar   +14 more
openaire   +1 more source

Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs

2025 IEEE International Reliability Physics Symposium (IRPS)
Abygaël Viey, William Vandendaele, P. Kouaté Wafo, Xavier Garros, Luigi Basset, F. Ponthenier, Joris Lacord, R. Fillon, X. Federspiel, D. Roy, S. Joblot, Dominique Golanski   +11 more
openaire   +2 more sources

Analysis of Stability Degradation of SRAMs Using a Physics-Based PBTI Model

IEEE Electron Device Letters, 2014
Kaushik Roy, Chih-Hsiang Ho, Soo Youn Kim   +2 more
exaly  

Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO<inf>2</inf> and HfSiON gate dielectrics

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2008
null Wei-Liang Lin, null Yao-Jen Lee, null Wen-Cheng Lo, null King-Sheng Chen, Y. T. Hou, K. C. Lin, null Tien-Sheng Chao   +6 more
openaire   +1 more source

PBTI Mechanisms in La Containing Hf-Based Oxides Assessed by Very Fast IV Measurements

2010
G Reimbold, F Boulanger, E Vincent
exaly