Results 251 to 260 of about 560,854 (291)
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IntenCD and mask phase uniformity
SPIE Proceedings, 2010The allowable wafer Critical Dimension Uniformity (CDU) budget of the 2x node poses stringent requirements on mask induced errors at wafer level. The total CDU budget of 2 nm which is partially consumed by across wafer and field process and imaging variations, leaves little room for additional mask errors to still comply to the overall CDU budget ...
Yaron Cohen +4 more
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Stellar Coronograph with Phase Mask
Publications of the Astronomical Society of the Pacific, 1997The detection of faint light sources very close to a bright star is primarily limited by light scattered by the Earth's atmosphere. This source of scattered light can now be reduced by means of adaptive optics, or totally eliminated by using a telescope in space.
F. Roddier, C. Roddier
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Wavefront Engineering: Phase Conjugate Masks
2021In this chapter, we revisit the basic principles, behind the pioneering efforts for implementing varifocal lenses, as a good example of wavefront engineering. Next, we define the concept of phase conjugated pairs (PCP), which is applied for linking varifocal lenses with the phase masks employed for reducing the impact of focus error on the MTF, as is ...
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EUVL alternating phase shift mask
SPIE Proceedings, 2011Extreme ultra-violet Lithography (EUVL) alternating phase shift mask (APSM) or other optical enhancement techniques are likely needed for 16nm (half pitch) technology generation and beyond. One possible option is the combination of EUVL and APSM. The fabrication of EUVL APSM is more difficult than either the fabrication of an EUVL binary mask or a ...
Pei-Yang Yan +6 more
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Alternating Phase-Shifting Mask
2009The principle of an alternating PSM [18â22] is compared with a COG mask in Fig. 5.1. The A¥=0.4 line is bordered by transmitting regions with 180° phase difference on an alternating PSM and by clear areas of the same phase on a COG mask. Phase difference on the alternating PSM leads to destructive interference, resulting in a sharp dark image.
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Metrology for phase-shifting masks
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1993Metrology test reticles that include a wide variety of structures typically encountered on phase-shifting masks were fabricated using a subtractive process. The test masks have been used to assess the ability of metrology instruments to measure linewidth, height, edge slope, roughness, critical dimension uniformity, and placement of the various ...
H. M. Marchman +3 more
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1994
X-ray Lithography has demonstrated the capabilities for patterning 0.25 μm features in production. Both theoretical and experimental studies have demonstrated that the inherent resolution of the X-ray can be achieved when the exposure system is designed correctly.
F. Cerrina, J. Xiao, Z. Y. Guo
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X-ray Lithography has demonstrated the capabilities for patterning 0.25 μm features in production. Both theoretical and experimental studies have demonstrated that the inherent resolution of the X-ray can be achieved when the exposure system is designed correctly.
F. Cerrina, J. Xiao, Z. Y. Guo
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Three-Dimensional Nanofabrication with Elastomeric Phase Masks
The Journal of Physical Chemistry B, 2007This Feature Article reviews recent work on an optical technique for fabricating, in a single exposure step, three-dimensional (3D) nanostructures with diverse structural layouts. The approach, which we refer to as proximity field nanopatterning, uses conformable, elastomeric phase masks to pattern thick layers of transparent, photosensitive materials ...
Shir, DJ Shir, Daniel J. +10 more
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Attenuated Phase-Shifting Mask
2009If the opaque regions on a COG mask become partially transmitting with a 180° phase relative to the bright regions, as shown in Fig. 6.1, an attenuated PSM results [15, 16]. As opposed to an alternating PSM where all phase regions image onto the wafer, the partially transmitting background of an attenuated PSMâusually with an intensity transmission ...
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Effective Apodized Phase Mask For Optimum FBGs
Conference on Lasers and Electro-Optics-Europe, 1998FBGs are promising devices for DWDM networks [1]. Phase mask (PM) technique is one of the most versatile techniques for massive production of FBGs. However, ever increasing requirements of DWDM put stringent requirements on FBG sidelobe suppression and spectral skirt sharpness.
J.J. Pan, F.Q. Zhou, Y. Shi, S.X. Li
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