PVA-assisted metal transfer for vertical WSe2 photodiode with asymmetric van der Waals contacts
Nanophotonics, 2023 The vertical electronic and optoelectronic devices based on 2D materials have shown great advantages over lateral devices, such as higher current density, faster switch speed, and superior short-channel control.
Song Xiaohui +8 more
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Problems of Masking and Anti-Reflective SiO2 in Silicon Technology
East European Journal of Physics, 2023 The article examines the problems of thermal oxidation of silicon. Oxidation plays an important role in planar technology, which in turn is the basis of the technology of silicon integrated circuits, photodetectors and other solid-state electronics ...
Mykola S. Kukurudziak
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INTRAVENOUS INFUSION DOSING SYSTEM FOR VOLUME CONTROL BASED ON SIGNAL PERIODIC MEASUREMENT
Spektra: Jurnal Fisika dan Aplikasinya, 2022 Intravenous fluid therapy is a commonly used treatment modality that is used in the treatment of hospitalized patients. Intravenous flow rates are often controlled by counting the number of fluid drops in a drip chamber while adjusting the intravenous ...
Lazuardi Umar +3 more
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Silicon p-i-n Mesa-Photodiode Technology
East European Journal of PhysicsThe paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route.
Mykola S. Kukurudziak +2 more
doaj +1 more source
An Accurate Projector Calibration Method Based on Polynomial Distortion Representation
Sensors, 2015 In structure light measurement systems or 3D printing systems, the errors caused by optical distortion of a digital projector always affect the precision performance and cannot be ignored.
Miao Liu +3 more
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Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali +2 more
core +1 more source
, 2014 Citation: 'photodiode' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.P04598 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire +1 more source
Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au
East European Journal of PhysicsThe results of studies of the current-voltage characteristics of a photodiode heterostructure are presented. Au-nCdS-nSi-pCdTe-Au, in forward and reverse directions.
Sharifa B. Utamuradova +5 more
doaj +1 more source
The influence of the structure of guard rings on the dark currents of silicon p-i-n photodiodes
Фізика і хімія твердого тіла, 2023 The article examines the influence of the guard rings (GR) system structure on the dark currents of responsive elements (RE) and the actual guard rings of silicon 4-element p-i-n photodiodes (PD). The samples were made on the basis of p-silicon by planar
M.S. Kukurudzіak
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A 3 Gb/s optical detector in standard CMOS for 850 nm optical communication [PDF]
, 2005 This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-/spl mu/m CMOS technology. A data rate of 3 Gb/s at BER
Annema, Anne-Johan +2 more
core +3 more sources