Results 31 to 40 of about 151,013 (284)

Titanium-Based Metasurfaces for Optoelectronics

open access: yesNanomaterials, 2023
We report on the fabrication method that enables the development of transparent conductive metasurfaces capable of the resonant absorption of light in specific frequency bands.
Stella Kavokina   +8 more
doaj   +1 more source

Silicon p-i-n Mesa-Photodiode Technology

open access: yesEast European Journal of Physics
The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route.
Mykola S. Kukurudziak   +2 more
doaj   +1 more source

An Accurate Projector Calibration Method Based on Polynomial Distortion Representation

open access: yesSensors, 2015
In structure light measurement systems or 3D printing systems, the errors caused by optical distortion of a digital projector always affect the precision performance and cannot be ignored.
Miao Liu   +3 more
doaj   +1 more source

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

open access: yesNanomaterials, 2023
InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers.
Hezhuang Liu   +5 more
doaj   +1 more source

photodiode [PDF]

open access: yes, 2014
Citation: 'photodiode' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.P04598 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

open access: yesEast European Journal of Physics
The results of studies of the current-voltage characteristics of a photodiode heterostructure are presented. Au-nCdS-nSi-pCdTe-Au, in forward and reverse directions.
Sharifa B. Utamuradova   +5 more
doaj   +1 more source

A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

open access: yesFrontiers in Physics, 2021
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier ...
Stavros Giannakopoulos   +17 more
doaj   +1 more source

High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers

open access: yesSensors
This study presents the development of a high-speed, broadband InGaAs/InP photodiode suitable for advanced sensing and optical detection applications across the critical wavelength range of 850–1550 nm.
Guohao Yang   +4 more
doaj   +1 more source

Sb-Based Low-Noise Avalanche Photodiodes

open access: yesPhotonics, 2023
Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry.
Joe C. Campbell   +2 more
doaj   +1 more source

Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]

open access: yes, 2010
The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain   +4 more
core   +4 more sources

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