Results 51 to 60 of about 40,433 (286)
Ultrafast GaAs microwave PIN diode
Electronics Letters, 1983 This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n+ substrate by MOCVD of a 2 μm, 1015 cm−3 unintentionally doped n− layer followed by a 0.3 μm, 4×1019 cm−3 Zn doped p+ layer. The isolation and insertion loss of a single shunt-mounted device are typically −27 dB and
R. Tayrani, R.W. Glew
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The phase-switched screen [PDF]
, 2004 Conventional (passive) radar-absorbent materials operate either by phase cancellation or by absorbing incident electromagnetic energy and converting it into heat. This paper examines a new type of active "absorber," called the phase-switched screen (PSS).
Chambers, B., Tennant, A.
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Tailoring the Properties of Functional Materials With N‐Oxides
Advanced Functional Materials, EarlyView.The properties of materials bearing N‐oxide groups are often dominated by the polar N+─O− bond. It provides hydrophilicity, selective ion‐binding, electric conductivity, or antifouling properties. Many of the underlying mechanisms have only recently been discovered, and the interest in N‐oxide materials is rapidly growing.
Timo Friedrich +5 more
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A simple device for the measurement of kerma based on commercial PIN photo diodes
EPJ Web of Conferences, 2012 The development of a dose reader for the measurement of the radiation dose from neutron and ionizing radiation is presented. The dose reader (kerma meter) is using as active element commercial PIN diodes with long base, which can provide a maximal ...
Kushpil S., Kushpil V., Huna Z.
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Operating principles of pin diodes
Electrical Engineering in Japan, 2007 AbstractAnalytical models of the pin diode in a small‐current operation are not known yet. This article presents a simple analytical model of the pin diode operation with its confirmation by a numerical simulation. At the onset, carrier recombinations are not included for the sake of simplicity. The exact JF−VF characteristic $[J_{F} \propto \hbox{exp}(
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Advanced Functional Materials, EarlyView.Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey +5 more
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NanomaterialsWe compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes ...
Artem Bercha +6 more
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Advanced Functional Materials, EarlyView.A minimally invasive, transepithelial corneal cross‐linking (TE‐CXL) approach is presented using upconversion nanoparticles (UCNPs)‐loaded contact lenses (UCLs), after topical delivery of hyaluronate–riboflavin conjugates. The NIR‐to‐UV/blue light conversion by UCNPs in a UCL can activate riboflavin for TE‐CXL, resulting in the biomechanical strength ...
Gibum Lee +8 more
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Scientific Reports, 2022 Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave ...
Jingtao Zhao +6 more
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, 2020 This lecture covers the fundamental aspects of the measurement of beam losses including their use for beam diagnostic and safety issues. The detailed functionality and detection principle of various common beam loss monitors are also presented, with a ...
Wittenburg, Kay
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