Results 201 to 210 of about 22,802 (264)

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]

ACS Omega
Chen HC, Liu AC, Lin CH, Chou SY, Chang TC, Kao TS, Kuo HC.   +6 more
europepmc   +1 more source

The Influence of Non-Thermal Plasma Treatment on Osseointegration of Endosteal Implants Presenting Decompressing Vertical Chambers. [PDF]

Bioengineering (Basel)
Mehra S, Shah H, Munkwitz SE, Iglesias NJ, Joshua T, Tadisina KK, Fullerton N, Nayak VV, Witek L, Coelho PG.   +9 more
europepmc   +1 more source

Thickness-dependent structural evolution of a-C:H layers formed by one-step Ar/CH₄ plasma reduction for direct Cu bonding. [PDF]

Sci Rep
Lee H, Kim SE.
europepmc   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols. [PDF]

Adv Mater
Tsarev S, Wu E, Cho K, Liu X, Lung QND, Hartman E, Sun T, Turedi B, Matt GJ, Frick S, Siol S, Jang T, Shorubalko I, Yakunin S, Kovalenko MV.   +14 more
europepmc   +1 more source

Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Li J, Gao Y, Zhang DW.
europepmc   +1 more source

Osseointegration of implant with various surface treatments. [PDF]

Bioinformation
Kalawat A, Zakaria WM, Kaur G, Gupta P, Srivastava S, Chandra A, Viswaja K.   +6 more
europepmc   +1 more source

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Numerical simulation of plasma-chemical etching reactors

1997 21st International Conference on Microelectronics. Proceedings, 2002
The effect of nonisothermality of the operating continuum on the etching rate and uniformity in a planar plasma-chemical reactor was analyzed. The temperature of an electrode with a wafer was assumed specified and varied in a range which is characteristic for such reactors. Convection, molecular conduction and radiation were taken into account.
Yu.N. Grigoryev, A.G. Gorobchuk
openaire   +1 more source

Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire

Russian Microelectronics, 2022
V S Kondratenko, Kondratenko V S
exaly   +2 more sources

Spectral investigation of the plasma-chemical etching of silicon dioxide

Journal of Applied Spectroscopy, 1979
Practical investigations in the past few years have shown the promising nature of the use of the plasma-chemical method of etching silicon dioxide films during the production of integrated circuits. Nevertheless, with rare exceptions [1-3], the available studies were carried out without calling upon modern diagnostic methods for studying the plasma ...
M. N. Bosyakov, N. N. Nikiforenko, A. A. Labuda   +2 more
openaire   +1 more source