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Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor
Russian Microelectronics, 2014Numeric simulation is used to study the effect of the high-frequency (HF) discharge structure on the process of plasma-chemical etching of silicon in a mixture of CF4/O2. The calculations are carried out using a mathematical model of a nonisothermal reactor, in which the gas mixture motion was described with the help of equations of multicomponent ...
Yu. N. Grigor’ev, A. G. Gorobchuk
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Atmospheric-Pressure PECVD Coating and Plasma Chemical Etching for Continuous Processing
IEEE Transactions on Plasma Science, 2007Summary form only given. In recent years there has been increasing interest in APPlasma surface processing, however the potential of the technology to coat or etch surfaces offers further significant future potential. Plasma processing at atmospheric pressure (APPlasmas) has attractions for both economic and technological reasons. Potential cost saving
Volkmar Hopfe, David W. Sheel
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Effect of RF discharge structure on etching rate in plasma-chemical reactor
2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma.
Yurii Grigoryev, Aleksey Gorobchuk
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Improvement of resist mask plasma etching durability by plasma chemical polymerization
Microelectronic Engineering, 1992Abstract A new method for improving resist plasma etching durability by means of plasma chemical modification has been developed. It was shown that organic films formed in radio frequency discharge in the mixture of argon and methylmethacrylate(MMA) while submitted to r.f. plasma in conditions usually used for etching in RIE mode were found to have 8–
V.F. Limanova +3 more
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Features of plasma chemical etching of lithium tantalate substrate (LiTaO???)
2023The results of researches of plasma chemical treatment of lithium monocrystalline tantalate (LiTaO???) from gas type, bias voltage (energy of chemically active ions) and from current of additional bias generator are given. A closed-loop electron drift plasma chemical reactor and gas mixtures containing Ar, Ar + Cl?????, and Ar + SF??? were used for the
Fedorovich, O.A. +3 more
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Method for Manufacturing Silicon X-Ray Masks Via Plasma Chemical Etching
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020A simple method for manufacturing silicon masks for deep X-ray lithography, conducted with the application of exposure radiation of the spectral range (0.5–7 A), is described. This method is based on planar silicon technology, which is widely used in the production of semiconductor devices.
A. N. Gentselev +3 more
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Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching
Key Engineering Materials, 2019.The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1[20; 1000] pF, С2[4; 100] pF,
Endiiarova, E. V., Ruby, Singh
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INVESTIGATING THE REMOVAL RATE OF PYROGENIC SiO2 BY PLASMA CHEMICAL ETCHING
Automation and modeling in design and managementThe study is devoted to identifying factors affecting the removal rate (etching) of pyrogenic silicon oxide (SiO2) films. The authors select the main adjustable parameters of the reactive ion plasma-chemical etching setup as external factors affecting the removal rate of pyrogenic SiO2.
Artem Adamov +4 more
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Optimization of technological parameters in plasma chemical etching of quartz single crystals
Russian Journal of Applied Chemistry, 2016Main technological parameters of the process of local plasmochemical etching of single-crystal quartz were optimized. The etching was performed in a gas mixture of CF4 and H2 under radio frequency (RF, 13.56 MHz) discharge excitation. The scientific experiment design by the Taguchi matrix method was used to examine the effect of chamber pressure, RF ...
A. A. Osipov +2 more
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Bulletin of the Russian Academy of Sciences: Physics
In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure.
O V Morozov
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In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure.
O V Morozov
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