Results 211 to 220 of about 22,849 (261)

Role of cold atmospheric plasma alone or combined with conventional surface treatments on shear bond strength of 3Y-TZP and 5YSZ ceramics bonded to dentin. [PDF]

Biomater Investig Dent
Alnazzawi AA, Aldamaty MF, AbdElaziz MH, Alqutaibi AY, Farghal AE, Almarashi JQ, Mohamed AH, Zafar MS.   +7 more
europepmc   +1 more source

Thickness-dependent structural evolution of a-C:H layers formed by one-step Ar/CH₄ plasma reduction for direct Cu bonding. [PDF]

Sci Rep
Lee H, Kim SE.
europepmc   +1 more source

The Influence of Non-Thermal Plasma Treatment on Osseointegration of Endosteal Implants Presenting Decompressing Vertical Chambers. [PDF]

Bioengineering (Basel)
Mehra S, Shah H, Munkwitz SE, Iglesias NJ, Joshua T, Tadisina KK, Fullerton N, Nayak VV, Witek L, Coelho PG.   +9 more
europepmc   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols. [PDF]

Adv Mater
Tsarev S, Wu E, Cho K, Liu X, Lung QND, Hartman E, Sun T, Turedi B, Matt GJ, Frick S, Siol S, Jang T, Shorubalko I, Yakunin S, Kovalenko MV.   +14 more
europepmc   +1 more source

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography. [PDF]

Chem Sci
Chu TTH, Le DN, Lee M, Narayan DM, Kim DS, Shirodkar S, Choe M, Yoo S, Tiwale N, Choi R, Ahn J, Sung MM, Nam CY, Kim J.   +13 more
europepmc   +1 more source

Osseointegration of implant with various surface treatments. [PDF]

Bioinformation
Kalawat A, Zakaria WM, Kaur G, Gupta P, Srivastava S, Chandra A, Viswaja K.   +6 more
europepmc   +1 more source

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Plasma Chemical Etching of Silicon

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer.
B K Bogomolov
exaly   +4 more sources

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

Key Engineering Materials, 2019
.The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1[20; 1000] pF, С2[4; 100] pF,
Endiiarova, E. V., Ruby, Singh
exaly   +3 more sources

Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire

Russian Microelectronics, 2022
V S Kondratenko, Kondratenko V S
exaly   +2 more sources

Dynamics of Deposition and Removal of a Fluorocarbon Film in the Cyclic Process of Plasma-Chemical Etching of Silicon

Bulletin of the Russian Academy of Sciences: Physics
In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure.
exaly   +2 more sources