Results 211 to 220 of about 22,802 (264)

Etching characteristics of GaN by plasma chemical vaporization machining

Surface and Interface Analysis, 2008
Abstract A high‐quality bulk gallium nitride (GaN) substrate, which is suitable for high‐quality homoepitaxial growth, is indispensable for realizing high‐performance GaN devices. With improvement in the quality of the bulk GaN substrate, the removal of subsurface damage induced during surface polishing has become
Yasuji Nakahama, Norio Kanetsuki, Takeshi Funaki, Masaru Kadono, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori   +7 more
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Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide

Japanese Journal of Applied Physics, 1995
A computational model for chemical reactions in plasmas has been developed and applied to the gas-phase chemistry of dry etching of silicon dioxide. An ab-initio molecular orbital method is used to determine the dissociation processes and the threshold energies for gases and neutral radicals.
Hideyuki Kazumi, Kazutami Tago
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Catalytic plasma chemical etching of silicon and silicon dioxide

SPIE Proceedings, 2003
It is reported about an activation of processes of plasmochemical etching of silicon, films of silicon dioxide and slices of crystalline piezoelectric quartz by some metals (Ag, Au, Cu, Sn, Pb, Na, K, Ca). The method of a catalytic plasmochemical etching of SiO 2 and Si under films of silver has been developed.
Yu. I. Dikarev, I. S. Surovtsev, S. M. Tsvetkov   +2 more
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Plasma chemical etching of silicon (optimization of process)

Proceedings. The 9th Russian-Korean International Symposium on Science and Technology, 2005. KORUS 2005., 2006
The basic results of plasma etching of silicon in CCl/sub 2/F/sub 2//O/sub 2/ in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl/sub 2/F/sub 2//O/sub 2/ in conditions of active delivery chemically active particles (CAP) is constructed at the expense of ...
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Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
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Plasma Chemical Etching of Silicon

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer.
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Plasma-chemical reactor with low ion energy for selective etching

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
The results of physical and technological tests of the modernized plasma-chemical reactor are presented. The chemically active ion's energy may be controlled by the magnetic field intensity in the range from 15 eV to 100 eV. (If it is necessary the ion energy may be increased up to 300 eV). The current density is /spl les/l5 mA/cm/sup -2/.
V.V. Ustalov, O.A. Fedorovich, A.A. Vdovenkov, S.K. Levitskaja   +3 more
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Plasma chemical aspects of magnetron ion etching with CF4/O2

Journal of Applied Physics, 1987
Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the ...
A. A. Bright, S. Kaushik, G. S. Oehrlein
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Plasma chemical etching of silicon in mems - technology

Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004., 2005
In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 /spl mu/m/min, experimentally is received.
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Theory of plasma chemical transport etching of gold in a chlorine plasma

Thin Solid Films, 1981
Abstract The behavior of the reactive ion etching of gold in a chlorine plasma reported earlier is shown in this paper to be interpretable in terms of a theory of chemical vapor transport, modified to account for the effect of species generated in the plasma and transported across the plasma sheaths to the reacting surfaces. The interpretation of the
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