Results 231 to 240 of about 22,802 (264)

Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures

Russian Journal of General Chemistry, 2015
High-aspect-ratio (HAR) silicon etching of micro-and nanostructures in a time-multiplexed deep etching process (Bosch process) is reviewed, including applications, different technological methods, critical challenges, and main principles of the technologies. HAR silicon etching is an application associated primarily with micro- and nanostructures. This
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EPR investigation of plasma-chemical resist etching in O2 and O2/CF4 discharges

Plasma Chemistry and Plasma Processing, 1990
During the etching of AZ 1350 photoresist in O2 and O2/CF4 discharges, ground-state concentrations of atoms (O, F, and H), and small radicals (OH, HO2, RO2) were measured in the discharge afterglow by EPR spectroscopy. In the case of CF4/O2 discharges, the dependence of O and F atom concentrations on the etch time reflects both surface oxidation and ...
F. -W. Breitbarth, E. Ducke, H. -J. Tiller   +2 more
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Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

Proceedings of 2011 6th International Forum on Strategic Technology, 2010
It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF 2 Cl 2 /O 2 . The load effect is studied.
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The optimization of parameters of deep plasma chemical etching of silicon for the elements of microelectromechanic systems

Russian Microelectronics, 2011
The dependences that characteristics of deep etching of silicon have on the process parameters are investigated. In order to find the optimal modes that provide high selectivity to the mask and to decrease the aperture effect, we used the method of a multifactor experiment. The results are used to fabricate the actual microelectromechanic systems (MEMS)
A. I. Vinogradov, N. M. Zaryankin, E. P. Prokop’ev, S. P. Timoshenkov, Yu. A. Mikkhailov   +4 more
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The Formation of a Topological Drawing in a Polycrystalline Diamond Layer by the Plasma-Chemical Etching Method

2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), 2019
The article is devoted to the actual problem of the synthesis of polycrystalline diamonds with a combination of unique electrophysical parameters (high hardness and thermal conductivity, low dielectric constant, high radiation resistance, etc.), due to which diamonds are promising materials for micromechanical devices.The features of synthesizing dense
Kseniya Y. Kraynova, Aleksandr E. Mishanin, Ekaterina A. Pecherskaya, Yuliya V. Shepeleva   +3 more
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Experimental research of ICP reactor for plasma-chemical etching

2015
The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power) have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density ...
Dudin, S.V., Zykov, A.V., Dahov, A.N., Farenik, V.I.   +3 more
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Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon

Russian Microelectronics, 2022
D. B. Murin, S. A. Pivovarenok, A. S. Kozin   +2 more
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Numerical Model of Plasma-Chemical Etching of Silicon in $$CF_4/H_2$$ Plasma

2015
The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied.
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PLASMA-CHEMICAL ETCHING OF SILICON DIOXIDE FILMS

Radio communication technology, 2019
V. N. Zima, A. N. Kuznetsov, S. A. Kuznetsova   +2 more
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The “Plasma-chemical etching” Virtual Lab

2013
Zaitsev, Alexander, Baburov, Vitaliy
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