Results 241 to 250 of about 6,644,773 (301)

Quantum confinement and hybrid integration in silicon light emitters toward scalable on-chip photonics. [PDF]

Discov Nano
Pourmand M, Razak NEA, Azeman NH, Ahmadipour M, Fu DC, Majlis BY, Yu HW, Chang EY, Berhanuddin DD.   +8 more
europepmc   +1 more source

Mechanistic Study of Low-Temperature Plasma-Activated InP/Al₂O₃/SOI Direct Wafer Bonding for High Bonding Energy. [PDF]

ACS Omega
Peng C, Meng Y, Sun S, Shao E, Kang Q, Jin R, Ma W, Zhang Y, Xue H, Cao L, Wang C, Wang Q.   +11 more
europepmc   +1 more source

Halogen-Mediated Polymer-Free Recovery of Pristine MoS₂ Monolayers From Gold-Assisted Exfoliation. [PDF]

Small Methods
Muthu J, Khurshid F, Lin YC, Hsieh YP, Kalbáč M.   +4 more
europepmc   +1 more source

Porous-lift-off germanium membranes as lightweight, flexible, and cost-effective template for III-V space solar cells: a review. [PDF]

Commun Eng
Ali A, En-Nadir R, Mahboub CK, Mokeddem IE, Ayari A, Mével B, Ripa J, Turala A, Chapotot A, Proost P, Sharma R, Cho J, Dessein K, Boucherif A.   +13 more
europepmc   +1 more source

Atmospheric-Pressure PECVD Coating and Plasma Chemical Etching for Continuous Processing

IEEE Transactions on Plasma Science, 2007
Summary form only given. In recent years there has been increasing interest in APPlasma surface processing, however the potential of the technology to coat or etch surfaces offers further significant future potential. Plasma processing at atmospheric pressure (APPlasmas) has attractions for both economic and technological reasons. Potential cost saving
Volkmar Hopfe, David W. Sheel
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Dynamics of Deposition and Removal of a Fluorocarbon Film in the Cyclic Process of Plasma-Chemical Etching of Silicon

Bulletin of the Russian Academy of Sciences: Physics
In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure.
O V Morozov
exaly   +2 more sources

Numerical simulation of plasma-chemical etching reactors

1997 21st International Conference on Microelectronics. Proceedings, 2002
The effect of nonisothermality of the operating continuum on the etching rate and uniformity in a planar plasma-chemical reactor was analyzed. The temperature of an electrode with a wafer was assumed specified and varied in a range which is characteristic for such reactors. Convection, molecular conduction and radiation were taken into account.
Yu.N. Grigoryev, A.G. Gorobchuk
openaire   +1 more source

Spectral investigation of the plasma-chemical etching of silicon dioxide

Journal of Applied Spectroscopy, 1979
Practical investigations in the past few years have shown the promising nature of the use of the plasma-chemical method of etching silicon dioxide films during the production of integrated circuits. Nevertheless, with rare exceptions [1-3], the available studies were carried out without calling upon modern diagnostic methods for studying the plasma ...
M. N. Bosyakov, N. N. Nikiforenko, A. A. Labuda   +2 more
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Etching characteristics of GaN by plasma chemical vaporization machining

Surface and Interface Analysis, 2008
Abstract A high‐quality bulk gallium nitride (GaN) substrate, which is suitable for high‐quality homoepitaxial growth, is indispensable for realizing high‐performance GaN devices. With improvement in the quality of the bulk GaN substrate, the removal of subsurface damage induced during surface polishing has become
Yasuji Nakahama, Norio Kanetsuki, Takeshi Funaki, Masaru Kadono, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori   +7 more
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Plasma Chemical Etching of Silicon

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer.
openaire   +1 more source