Results 241 to 250 of about 86,621 (303)

Numerical simulation of plasma-chemical etching reactors

1997 21st International Conference on Microelectronics. Proceedings, 2002
The effect of nonisothermality of the operating continuum on the etching rate and uniformity in a planar plasma-chemical reactor was analyzed. The temperature of an electrode with a wafer was assumed specified and varied in a range which is characteristic for such reactors. Convection, molecular conduction and radiation were taken into account.
Yu.N. Grigoryev, A.G. Gorobchuk
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Etching characteristics of GaN by plasma chemical vaporization machining

Surface and Interface Analysis, 2008
Abstract A high‐quality bulk gallium nitride (GaN) substrate, which is suitable for high‐quality homoepitaxial growth, is indispensable for realizing high‐performance GaN devices. With improvement in the quality of the bulk GaN substrate, the removal of subsurface damage induced during surface polishing has become
Yasuji Nakahama, Norio Kanetsuki, Takeshi Funaki, Masaru Kadono, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori   +7 more
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Catalytic plasma chemical etching of silicon and silicon dioxide

SPIE Proceedings, 2003
It is reported about an activation of processes of plasmochemical etching of silicon, films of silicon dioxide and slices of crystalline piezoelectric quartz by some metals (Ag, Au, Cu, Sn, Pb, Na, K, Ca). The method of a catalytic plasmochemical etching of SiO 2 and Si under films of silver has been developed.
Yu. I. Dikarev, I. S. Surovtsev, S. M. Tsvetkov   +2 more
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Plasma chemical aspects of magnetron ion etching with CF4/O2

Journal of Applied Physics, 1987
Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the ...
A. A. Bright, S. Kaushik, G. S. Oehrlein
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Method for Manufacturing Silicon X-Ray Masks Via Plasma Chemical Etching

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020
A simple method for manufacturing silicon masks for deep X-ray lithography, conducted with the application of exposure radiation of the spectral range (0.5–7 A), is described. This method is based on planar silicon technology, which is widely used in the production of semiconductor devices.
A. N. Gentselev, F. N. Dultsev, B. G. Goldenberg, K. E. Kuper   +3 more
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Spectral investigation of the plasma-chemical etching of silicon dioxide

Journal of Applied Spectroscopy, 1979
Practical investigations in the past few years have shown the promising nature of the use of the plasma-chemical method of etching silicon dioxide films during the production of integrated circuits. Nevertheless, with rare exceptions [1-3], the available studies were carried out without calling upon modern diagnostic methods for studying the plasma ...
M. N. Bosyakov, N. N. Nikiforenko, A. A. Labuda   +2 more
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Plasma Chemical Etching of Silicon

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer.
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