Results 251 to 260 of about 86,621 (303)

Plasma chemical etching of silicon (optimization of process)

Proceedings. The 9th Russian-Korean International Symposium on Science and Technology, 2005. KORUS 2005., 2006
The basic results of plasma etching of silicon in CCl/sub 2/F/sub 2//O/sub 2/ in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl/sub 2/F/sub 2//O/sub 2/ in conditions of active delivery chemically active particles (CAP) is constructed at the expense of ...
openaire   +1 more source

Plasma-chemical reactor with low ion energy for selective etching

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
The results of physical and technological tests of the modernized plasma-chemical reactor are presented. The chemically active ion's energy may be controlled by the magnetic field intensity in the range from 15 eV to 100 eV. (If it is necessary the ion energy may be increased up to 300 eV). The current density is /spl les/l5 mA/cm/sup -2/.
V.V. Ustalov, O.A. Fedorovich, A.A. Vdovenkov, S.K. Levitskaja   +3 more
openaire   +1 more source

Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide

Japanese Journal of Applied Physics, 1995
A computational model for chemical reactions in plasmas has been developed and applied to the gas-phase chemistry of dry etching of silicon dioxide. An ab-initio molecular orbital method is used to determine the dissociation processes and the threshold energies for gases and neutral radicals.
Hideyuki Kazumi, Kazutami Tago
openaire   +1 more source

Plasma chemical etching of silicon in mems - technology

Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004., 2005
In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 /spl mu/m/min, experimentally is received.
openaire   +1 more source

Atmospheric-Pressure PECVD Coating and Plasma Chemical Etching for Continuous Processing

IEEE Transactions on Plasma Science, 2007
Summary form only given. In recent years there has been increasing interest in APPlasma surface processing, however the potential of the technology to coat or etch surfaces offers further significant future potential. Plasma processing at atmospheric pressure (APPlasmas) has attractions for both economic and technological reasons. Potential cost saving
Volkmar Hopfe, David W. Sheel
openaire   +1 more source

Improvement of resist mask plasma etching durability by plasma chemical polymerization

Microelectronic Engineering, 1992
Abstract A new method for improving resist plasma etching durability by means of plasma chemical modification has been developed. It was shown that organic films formed in radio frequency discharge in the mixture of argon and methylmethacrylate(MMA) while submitted to r.f. plasma in conditions usually used for etching in RIE mode were found to have 8–
V.F. Limanova, D.B. Askerov, A.V. Kovalchuk, V.N. Vasilets   +3 more
openaire   +1 more source

Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
openaire   +1 more source

Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process

Russian Microelectronics, 2007
The conditions of implementation of aspect-ratio-independent etching (ARIE) are given for a two-stage etching/passivation process in an SF6/C4F8 plasma. It is shown experimentally that the ARIE etching is achieved by extension of the stage of passivation and/or reduction of the energy of ions at the stage of etching.
O. V. Morozov, I. I. Amirov
openaire   +1 more source

Optimization of technological parameters in plasma chemical etching of quartz single crystals

Russian Journal of Applied Chemistry, 2016
Main technological parameters of the process of local plasmochemical etching of single-crystal quartz were optimized. The etching was performed in a gas mixture of CF4 and H2 under radio frequency (RF, 13.56 MHz) discharge excitation. The scientific experiment design by the Taguchi matrix method was used to examine the effect of chamber pressure, RF ...
A. A. Osipov, S. E. Alexandrov, Ar. A. Osipov   +2 more
openaire   +1 more source

Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures

Russian Journal of General Chemistry, 2015
High-aspect-ratio (HAR) silicon etching of micro-and nanostructures in a time-multiplexed deep etching process (Bosch process) is reviewed, including applications, different technological methods, critical challenges, and main principles of the technologies. HAR silicon etching is an application associated primarily with micro- and nanostructures. This
openaire   +1 more source