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Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

Proceedings of 2011 6th International Forum on Strategic Technology, 2010
It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF 2 Cl 2 /O 2 . The load effect is studied.
openaire   +1 more source

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Semiconductors, 2018
The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied.
A. I. Okhapkin   +5 more
openaire   +1 more source

PLASMA-CHEMICAL ETCHING OF SILICON DIOXIDE FILMS

Radio communication technology, 2019
V. N. Zima   +2 more
openaire   +1 more source

Numerical Model of Plasma-Chemical Etching of Silicon in $$CF_4/H_2$$ Plasma

2015
The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied.
openaire   +1 more source

Formation of Nanoscale Structures of Silicon Photonics and Optoelectronics by Plasma Chemical Etching

2023 Radiation and Scattering of Electromagnetic Waves (RSEMW), 2023
Victor S. Klimin   +3 more
openaire   +1 more source

Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire

Russian Microelectronics, 2022
S. V. Red’kin   +3 more
openaire   +1 more source

Fabrication of Structures on SiC Surfaces by Plasma Chemical Etching

Russian Microelectronics
V. S. Klimin   +6 more
openaire   +1 more source

Effects of N2 addition on chemical dry etching of silicon oxide layers in F2∕N2∕Ar remote plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2006
N ‐E Lee
exaly  

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