In-Line Plasma-Chemical Etching of Crystalline Silicon Solar Wafers at Atmospheric Pressure
IEEE Transactions on Plasma Science, 2009Atmospheric pressure plasma technologies are a potential substitution for wet chemical and vacuum processes in the production of crystalline silicon solar cells, leading to a simplified in-line processing chain. In this contribution, a plasma chemical etching technology is presented as a basic step for a future continuous production process. A linearly
Dorit Linaschke +7 more
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Theory of plasma chemical transport etching of gold in a chlorine plasma
Thin Solid Films, 1981Abstract The behavior of the reactive ion etching of gold in a chlorine plasma reported earlier is shown in this paper to be interpretable in terms of a theory of chemical vapor transport, modified to account for the effect of species generated in the plasma and transported across the plasma sheaths to the reacting surfaces. The interpretation of the
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Experimental research of ICP reactor for plasma-chemical etching
2015The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power) have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density ...
Dudin, S.V. +3 more
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Numerical Model of Plasma-Chemical Etching of Silicon in $$CF_4/H_2$$ Plasma
2015The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied.
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Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics
Proceedings of 2011 6th International Forum on Strategic Technology, 2010It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF 2 Cl 2 /O 2 . The load effect is studied.
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PLASMA-CHEMICAL ETCHING OF SILICON DIOXIDE FILMS
Radio communication technology, 2019V. N. Zima +2 more
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Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire
Russian Microelectronics, 2022S. V. Red’kin +3 more
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Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon
Russian Microelectronics, 2022D. B. Murin +2 more
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Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching
Advanced Functional Materials, 2021Julian A Michaels +2 more
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Circulating tumor DNA in advanced solid tumors: Clinical relevance and future directions
Ca-A Cancer Journal for Clinicians, 2021Michael L Cheng +2 more
exaly