Results 271 to 280 of about 6,644,773 (301)
Some of the next articles are maybe not open access.
Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics
Proceedings of 2011 6th International Forum on Strategic Technology, 2010It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF 2 Cl 2 /O 2 . The load effect is studied.
openaire +1 more source
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
Semiconductors, 2018The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied.
A. I. Okhapkin +5 more
openaire +1 more source
PLASMA-CHEMICAL ETCHING OF SILICON DIOXIDE FILMS
Radio communication technology, 2019V. N. Zima +2 more
openaire +1 more source
Numerical Model of Plasma-Chemical Etching of Silicon in $$CF_4/H_2$$ Plasma
2015The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied.
openaire +1 more source
The “Plasma-chemical etching” Virtual Lab
2013Zaitsev, Alexander, Baburov, Vitaliy
openaire +1 more source
2023 Radiation and Scattering of Electromagnetic Waves (RSEMW), 2023
Victor S. Klimin +3 more
openaire +1 more source
Victor S. Klimin +3 more
openaire +1 more source
Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire
Russian Microelectronics, 2022S. V. Red’kin +3 more
openaire +1 more source
Fabrication of Structures on SiC Surfaces by Plasma Chemical Etching
Russian MicroelectronicsV. S. Klimin +6 more
openaire +1 more source
Effects of ion bombardment and chemical reaction on wafer temperature during plasma etching
Journal of Applied Physics, 1990O Joubert, J Pelletier
exaly
Effects of N2 addition on chemical dry etching of silicon oxide layers in F2∕N2∕Ar remote plasmas
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2006N ‐E Lee
exaly

