Results 261 to 270 of about 6,644,773 (301)

Improvement of resist mask plasma etching durability by plasma chemical polymerization

Microelectronic Engineering, 1992
Abstract A new method for improving resist plasma etching durability by means of plasma chemical modification has been developed. It was shown that organic films formed in radio frequency discharge in the mixture of argon and methylmethacrylate(MMA) while submitted to r.f. plasma in conditions usually used for etching in RIE mode were found to have 8–
V.F. Limanova, D.B. Askerov, A.V. Kovalchuk, V.N. Vasilets   +3 more
openaire   +1 more source

Features of plasma chemical etching of lithium tantalate substrate (LiTaO???)

2023
The results of researches of plasma chemical treatment of lithium monocrystalline tantalate (LiTaO???) from gas type, bias voltage (energy of chemically active ions) and from current of additional bias generator are given. A closed-loop electron drift plasma chemical reactor and gas mixtures containing Ar, Ar + Cl?????, and Ar + SF??? were used for the
Fedorovich, O.A., Hladkovska, O.V., Hladkovskyi, V.V., Nedybaliuk, A.F.   +3 more
openaire   +1 more source

Effect of RF discharge structure on etching rate in plasma-chemical reactor

2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma.
Yurii Grigoryev, Aleksey Gorobchuk
openaire   +1 more source

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

Key Engineering Materials, 2019
.The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1[20; 1000] pF, С2[4; 100] pF,
Endiiarova, E. V., Ruby, Singh
openaire   +2 more sources

Experimental research of ICP reactor for plasma-chemical etching

2015
The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power) have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density ...
Dudin, S.V., Zykov, A.V., Dahov, A.N., Farenik, V.I.   +3 more
openaire   +1 more source

Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor

Russian Microelectronics, 2014
Numeric simulation is used to study the effect of the high-frequency (HF) discharge structure on the process of plasma-chemical etching of silicon in a mixture of CF4/O2. The calculations are carried out using a mathematical model of a nonisothermal reactor, in which the gas mixture motion was described with the help of equations of multicomponent ...
Yu. N. Grigor’ev, A. G. Gorobchuk
openaire   +1 more source

Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures

Russian Journal of General Chemistry, 2015
High-aspect-ratio (HAR) silicon etching of micro-and nanostructures in a time-multiplexed deep etching process (Bosch process) is reviewed, including applications, different technological methods, critical challenges, and main principles of the technologies. HAR silicon etching is an application associated primarily with micro- and nanostructures. This
openaire   +1 more source

Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process

Russian Microelectronics, 2007
The conditions of implementation of aspect-ratio-independent etching (ARIE) are given for a two-stage etching/passivation process in an SF6/C4F8 plasma. It is shown experimentally that the ARIE etching is achieved by extension of the stage of passivation and/or reduction of the energy of ions at the stage of etching.
O. V. Morozov, I. I. Amirov
openaire   +1 more source

Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon

Russian Microelectronics, 2022
D. B. Murin, S. A. Pivovarenok, A. S. Kozin   +2 more
openaire   +1 more source

Numerical modeling of two RF discharge structure in plasma-chemical etching reactor

2013 International Siberian Conference on Control and Communications (SIBCON), 2013
The plasma-chemical etching technology in RF discharge was simulated in hydrodynamical approach. The calculations based on the mathematical model of plasma-chemical reactor in which gas flow was described by the convective-diffusion equations of multicomponent physical-chemical hydrodynamics.
Yurii N. Grigoryev, Aleksey G. Gorobchuk
openaire   +1 more source