Results 261 to 270 of about 86,621 (303)

Effect of RF discharge structure on etching rate in plasma-chemical reactor

2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma.
Yurii Grigoryev, Aleksey Gorobchuk
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Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor

Russian Microelectronics, 2014
Numeric simulation is used to study the effect of the high-frequency (HF) discharge structure on the process of plasma-chemical etching of silicon in a mixture of CF4/O2. The calculations are carried out using a mathematical model of a nonisothermal reactor, in which the gas mixture motion was described with the help of equations of multicomponent ...
Yu. N. Grigor’ev, A. G. Gorobchuk
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Features of plasma chemical etching of lithium tantalate substrate (LiTaO???)

2023
The results of researches of plasma chemical treatment of lithium monocrystalline tantalate (LiTaO???) from gas type, bias voltage (energy of chemically active ions) and from current of additional bias generator are given. A closed-loop electron drift plasma chemical reactor and gas mixtures containing Ar, Ar + Cl?????, and Ar + SF??? were used for the
Fedorovich, O.A., Hladkovska, O.V., Hladkovskyi, V.V., Nedybaliuk, A.F.   +3 more
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Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Semiconductors, 2018
The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied.
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin   +5 more
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Numerical modeling of two RF discharge structure in plasma-chemical etching reactor

2013 International Siberian Conference on Control and Communications (SIBCON), 2013
The plasma-chemical etching technology in RF discharge was simulated in hydrodynamical approach. The calculations based on the mathematical model of plasma-chemical reactor in which gas flow was described by the convective-diffusion equations of multicomponent physical-chemical hydrodynamics.
Yurii N. Grigoryev, Aleksey G. Gorobchuk
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INVESTIGATING THE REMOVAL RATE OF PYROGENIC SiO2 BY PLASMA CHEMICAL ETCHING

Automation and modeling in design and management
The study is devoted to identifying factors affecting the removal rate (etching) of pyrogenic silicon oxide (SiO2) films. The authors select the main adjustable parameters of the reactive ion plasma-chemical etching setup as external factors affecting the removal rate of pyrogenic SiO2.
Artem Adamov, Alina Golovko, Alexey Malakhanov, Yuliya Vasil'eva, Alexey Pavlov   +4 more
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Magnetron Reactive Ion Etching of GaAs: Plasma Chemical Aspects and Surface Damage Studies

MRS Proceedings, 1990
Using a magnetic field to confine the plasma closer to the cathode has been shown to be advantageous in dry etching technology since this yields a high degree of ionization at low pressures. We report here the results of a study of magnetron reactive ion etching of GaAs using a freon discharge.
G. F. McLane, M. Meyyappan, M. Taysing-Lara, M. W. Cole, C. Wrenn, L Yerke, D. Eckart   +6 more
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Plasma-Chemical Etching Process Behavioral Models Based on Tree Ensembles and Neural Network

2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE), 2018
In the modern semiconductor manufacturing technology it is essential to control the result of a wafer processing to ensure stability and high production yield. One of the promising techniques, which can provide the information about the result of a process, is predictive modeling based on machine learning models.
Artyom A. Popov, Dmitry V. Bilevich, Andrei S. Salnikov, Alexey A. Kalentyev, Dmitry V. Garays   +4 more
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EPR investigation of plasma-chemical resist etching in O2 and O2/CF4 discharges

Plasma Chemistry and Plasma Processing, 1990
During the etching of AZ 1350 photoresist in O2 and O2/CF4 discharges, ground-state concentrations of atoms (O, F, and H), and small radicals (OH, HO2, RO2) were measured in the discharge afterglow by EPR spectroscopy. In the case of CF4/O2 discharges, the dependence of O and F atom concentrations on the etch time reflects both surface oxidation and ...
F. -W. Breitbarth, E. Ducke, H. -J. Tiller   +2 more
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Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

Key Engineering Materials, 2019
.The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1[20; 1000] pF, С2[4; 100] pF,
Endiiarova, E. V., Ruby, Singh
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