Results 151 to 160 of about 2,786,485 (335)

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

Solar Energy and Sustainable Development, 2014
As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer rel11ova] using Trifluormethane/Sulfur Hexafluoride (CHF3/ SF6) gas mixture in commercial silicon-nitride plasma enhanced ...
Ahmed S. Kagilik
doaj  

A Colloidal Quantum Dot Thermistor and Bolometer

Advanced Materials, EarlyView.
This work introduces colloidal quantum dot thermistors employing a potential barrier structure to tune the activation energy of transport and hence the temperature coefficient of resistance (TCR). Upon integration with plasmonic absorbers, the CQD‐based bolometer device enables room‐temperature wavelength‐selective photodetection across the mid‐ to ...
Gaurav Kumar, Mariona Dalmases, Nima Taghipour, Rajesh Bera, Guy L. Whitworth, Goretti Torres Perez, Miguel Dosil, Gerasimos Konstantatos   +7 more
wiley   +1 more source

Doping density, not valency, influences catalytic metal-assisted plasma etching of silicon.

Mater Horiz, 2023
Sun JB, Peimyoo N, Douglas JO, Almquist BD.   +3 more
europepmc   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3–Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions

Scientific Reports
In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber’s interior can be influenced by plasma attack.
Ho Jin Ma, Seonghyeon Kim, Ha-Neul Kim, Mi-Ju Kim, Jae-Woong Ko, Jae-Wook Lee, Jung-Hyung Kim, Hyo-Chang Lee, Young-Jo Park   +8 more
doaj   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

Advanced Electronic Materials
The technique of plasma processing is beneficial for wafer cleaning and precision etching of integrated circuits and essential in manufacture of advanced semiconductor devices with unmatched perfection. Research on two‐dimensional (2D) materials, such as
Changmin Kim, Muyoung Kim, Seongho Kim, Minji Kang, Min Sup Choi, Hyeong‐U Kim   +5 more
doaj   +1 more source

Increased Endurance of Nonvolatile Photonics Enabled by Nanostructured Phase‐Change Materials

Advanced Materials, EarlyView.
Tapered and segmented islands of the phase‐change material (PCM) antimony selenide (Sb2Se3) integrated on silicon microring resonators enable ultra‐low‐loss, high‐endurance, non‐volatile photonic tuning. The nanostructured PCM design suppresses interfacial scattering and thermal stress, achieving record endurance over 100 million electrical switching ...
Jayita Dutta, Andrew Tang, Brian Mills, Rui Chen, Arnab Manna, Gokul Nath SJ, Virat Tara, Dennis Callahan, Cosmin Constantin Popescu, Juejun Hu, Arka Majumdar   +10 more
wiley   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source