Results 141 to 150 of about 1,458,991 (299)

Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

Solar Energy and Sustainable Development, 2014
As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer rel11ova] using Trifluormethane/Sulfur Hexafluoride (CHF3/ SF6) gas mixture in commercial silicon-nitride plasma enhanced ...
Ahmed S. Kagilik
doaj  

Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar

, 2009
Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-
Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G.; Zhang, L.
core  

Reactivity‐Guided Janus Graphene With Asymmetric Interfacial Electrostatics for Tunable Charge Transport

Advanced Materials, EarlyView.
Stepwise dual‐side functionalization creates covalent Janus graphene with chemically and electrostatically asymmetric interfaces. The resulting nonadditive surface‐potential response and pronounced charge‐transport modulation demonstrate a versatile route for tailoring the electronic properties of graphene.
Shishi Liu, Zhuting Hao, Mira Kreßler, Oguzhan Yücel, Lotte Polling, Adrián Dewambrechies, Wesley Pietsch, Philip Nickl, Felix Fels, Kevin Pagel, Markus R. Heinrich, Patryk Kusch, Kirill Bolotin, Xin Chen, Siegfried Eigler   +14 more
wiley   +1 more source

Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3–Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions

Scientific Reports
In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber’s interior can be influenced by plasma attack.
Ho Jin Ma, Seonghyeon Kim, Ha-Neul Kim, Mi-Ju Kim, Jae-Woong Ko, Jae-Wook Lee, Jung-Hyung Kim, Hyo-Chang Lee, Young-Jo Park   +8 more
doaj   +1 more source

plasma etch

Citation: 'plasma etch' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09555 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

, 2007
Inductively coupled plasma (ICP) etching of InP in Cl-2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma
Zheng WH (Zheng Wan-Hua), Fan ZC (Fan Zhong-Chao), Ren G (Ren Gang), Chen CH (Chen Chang-Hui), Zheng, WH, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. 电子邮箱地址: whzheng@red.semi.ac.cn, Ma XT (Ma Xiao-Tao)   +5 more
core  

Where Precursor Loading Stops Making a Difference: Resolving an Operational Infiltration Limit for Nanoparticle Synthesis Using Dual Quantification of Reverse Micelle Nanoreactors

Advanced Materials Interfaces, EarlyView.
A dual characterization strategy combining nanomechanical and mass measurements resolves a common operational loading threshold in reverse micelle nanoreactors. This transferable framework provides a rational strategy for optimizing precursor loading and nanoparticle synthesis, across template‐mediated fabrication systems.
Linan Cui, Pedro Q. Oliveira, Kyla N. Sask, Ayse Z. Turak   +3 more
wiley   +1 more source

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

Advanced Electronic Materials
The technique of plasma processing is beneficial for wafer cleaning and precision etching of integrated circuits and essential in manufacture of advanced semiconductor devices with unmatched perfection. Research on two‐dimensional (2D) materials, such as
Changmin Kim, Muyoung Kim, Seongho Kim, Minji Kang, Min Sup Choi, Hyeong‐U Kim   +5 more
doaj   +1 more source

Doping density, not valency, influences catalytic metal-assisted plasma etching of silicon.

Mater Horiz, 2023
Sun JB, Peimyoo N, Douglas JO, Almquist BD.   +3 more
europepmc   +1 more source