Advanced Materials, EarlyView.Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho +6 more
wiley +1 more source
Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO2. [PDF]
Sensors (Basel), 2022 Lee Y +5 more
europepmc +1 more source
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
Advanced Materials, EarlyView.A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source
Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production. [PDF]
ACS Appl Nano Mater, 2022 Chaker A +6 more
europepmc +1 more source
Removal of epoxy-attached thin-sections from glass slides by plasma-etching
, 1987 Thin-sectioned samples mounted on glass slides with common petrographic epoxies cannot be easily removed (for subsequent ion-milling) by standard methods such as heating or dissolution in solvents.
Van Deusen, Stuart B. +1 more
core +1 more source
Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors
Advanced Materials, EarlyView.We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian +23 more
wiley +1 more source
The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF6/O2 Plasma Etching Conditions. [PDF]
Micromachines (Basel), 2022 Woo JC, Um DS.
europepmc +1 more source
Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
Advanced Materials, EarlyView.Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee +9 more
wiley +1 more source
Using Plasma Etching to Access the Polymer Density Distribution and Diffusivity of Gel Particles. [PDF]
Polymers (Basel), 2021 Suarez IJ +2 more
europepmc +1 more source
Plasma Etching of Hydrogen-Silsesquioxane
, 1998 CF4 plasma etching of hydrogen-silsesquioxane films on bare silicon substrates was conducted. An increase in average etching rate and a decrease in dielectric constant from 2.9 to 2.7 were observed after a top layer was removed from the surface of the ...
Youfan Liu, Chris McMillan, Fred Dall
core +1 more source