Results 101 to 110 of about 27,823 (260)

Thin and Scalable Hybrid Emission Filter via Plasma Etching for Low-Invasive Fluorescence Detection. [PDF]

Sensors (Basel), 2023
Rustami E, Sasagawa K, Sugie K, Ohta Y, Takehara H, Haruta M, Tashiro H, Ohta J.   +7 more
europepmc   +1 more source

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

Advanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford, Anne Flechsig, Shilei Ding, Emir Karadža, Niklas Kercher, Tobias Goldenberger, Elisabeth Müller, Pietro Gambardella, Laura J. Heyderman, Aleš Hrabec   +9 more
wiley   +1 more source

Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO₂. [PDF]

Sensors (Basel), 2022
Lee Y, Kim S, Lee J, Cho C, Seong I, You S.   +5 more
europepmc   +1 more source

Unveiling Exsolution‐Induced Giant Electronic and Magnetic Property Changes in Non‐Stoichiometric Titanate Perovskite Thin Films

Advanced Materials, EarlyView.
A giant insulator to metal transition and emergent superparamagnetism are revealed by nanoparticle exsolution in non‐stoichiometric titanate perovskite thin films. By combining transport, synchrotron spectroscopy, and first‐principles calculations, this work reveals how defect reconfiguration and lattice reconstruction fundamentally reshape electronic ...
Sungil Kim, June Ho Lee, Yaolong Xing, Dongchang Kim, Haeseong Jeong, Mongjun Jeong, Manuel Valvidares, Stuart S. P. Parkin, Sang Ho Oh, Donghwa Lee, Hyojin Yoon, Hyeon Han   +11 more
wiley   +1 more source

Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production. [PDF]

ACS Appl Nano Mater, 2022
Chaker A, Alty HA, Winpenny P, Whitehead GFS, Timco GA, Lewis SM, Winpenny REP.   +6 more
europepmc   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF₆/O₂ Plasma Etching Conditions. [PDF]

Micromachines (Basel), 2022
Woo JC, Um DS.
europepmc   +1 more source

A Geometrically Transient Platform for Bioelectronic Implants

Advanced Materials, EarlyView.
Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik, John D. Goodwin, Atharv Naik, Philip Coatsworth, Ioi Chit Cheung, Farbod Amirghasemi, Anies Sohi, Ehsan Abedi, Tayeb Tadlaoui, Maral P. S. Mousavi, Andriy S. Kozlov, Victoria Salem, Andrew S. Cowburn, Firat Guder   +13 more
wiley   +1 more source

Using Plasma Etching to Access the Polymer Density Distribution and Diffusivity of Gel Particles. [PDF]

Polymers (Basel), 2021
Suarez IJ, Sierra-Martin B, Fernandez-Barbero A.   +2 more
europepmc   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source