Results 91 to 100 of about 1,458,991 (299)

Plasma mass spectrometric analysis and control of reactive ion etching of InP and related compounds

open access: yes, 2022
S.98-102The authors report on the investigation of mechanisms involved in the reactive ion etching of InP and related compounds by in situ determination of plasma species using mass spectroscopy.
Schmid, H.
core   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films

open access: yesMicro and Nano Engineering, 2018
Cryogenic plasma deep-etching for silicon sub-micron structures was studied with the use of modified poly(styrene) (PS) perforated masks obtained from laterally phase separated PS and poly (lactic acid) PLA blend thin films.
M. Kulsreshath   +7 more
doaj   +1 more source

Silicon flower structures by maskless plasma etching. [PDF]

open access: yesHeliyon, 2023
Zhao G   +6 more
europepmc   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Density wave like transport anomalies in surface doped Na2IrO3

open access: yesAIP Advances, 2017
We report that the surface conductivity of Na2IrO3 crystal is extremely tunable by high energy Ar plasma etching and can be tuned from insulating to metallic with increasing etching time.
Kavita Mehlawat, Yogesh Singh
doaj   +1 more source

The Etching Behaviour and Fluorine-Based-Plasma Resistance of YOF Coatings Deposited by Atmospheric Plasma Spraying

open access: yes
There is a high demand for plasma-resistant coatings that prevent the corrosion of the internal ceramic components of plasma etching equipment, thereby reducing particle contamination and process drift.
Kaiqu Ang   +8 more
core   +1 more source

Inductively coupled plasma dry etching process on planar lightwave circuit fabrication / Chuah Khoon Seah [PDF]

open access: yes, 2010
The main objective of this project is to master state-of-the-art techniques and knowledge in silica etching in order to achieve high quality waveguide circuit on Planar Lightwave Circuit devices.
Chuah, Khoon Seah
core  

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

open access: yesAdvanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair   +3 more
wiley   +1 more source

Plasma-chemical etching of gallium nitride epitaxial structures

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift.
A. G. Borisenko   +5 more
doaj  

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