Results 91 to 100 of about 27,754 (260)

Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO₂. [PDF]

Sensors (Basel), 2022
Lee Y, Kim S, Lee J, Cho C, Seong I, You S.   +5 more
europepmc   +1 more source

plasma etch

Citation: 'plasma etch' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09555 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production. [PDF]

ACS Appl Nano Mater, 2022
Chaker A, Alty HA, Winpenny P, Whitehead GFS, Timco GA, Lewis SM, Winpenny REP.   +6 more
europepmc   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF₆/O₂ Plasma Etching Conditions. [PDF]

Micromachines (Basel), 2022
Woo JC, Um DS.
europepmc   +1 more source

Unveiling Exsolution‐Induced Giant Electronic and Magnetic Property Changes in Non‐Stoichiometric Titanate Perovskite Thin Films

Advanced Materials, EarlyView.
A giant insulator to metal transition and emergent superparamagnetism are revealed by nanoparticle exsolution in non‐stoichiometric titanate perovskite thin films. By combining transport, synchrotron spectroscopy, and first‐principles calculations, this work reveals how defect reconfiguration and lattice reconstruction fundamentally reshape electronic ...
Sungil Kim, June Ho Lee, Yaolong Xing, Dongchang Kim, Haeseong Jeong, Mongjun Jeong, Manuel Valvidares, Stuart S. P. Parkin, Sang Ho Oh, Donghwa Lee, Hyojin Yoon, Hyeon Han   +11 more
wiley   +1 more source

Using Plasma Etching to Access the Polymer Density Distribution and Diffusivity of Gel Particles. [PDF]

Polymers (Basel), 2021
Suarez IJ, Sierra-Martin B, Fernandez-Barbero A.   +2 more
europepmc   +1 more source

Conductive Hydrogels for Exogenous Sensing and Cell Fate Control

Advanced Materials, EarlyView.
We engineer electrically conductive hydrogels by combining sulfated glycosaminoglycans with semiconducting polymers. These hydrogels bind bioactive proteins, including growth factors, whose release or retention can be modulated by low‐voltage stimulation. The hydrogels are also integrated as 3D channels in organic electrochemical transistors as part of
Teuku Fawzul Akbar, Carlos Alejandro Jimenez‐Rodriguez, Railia Biktimirova, Ilka Hermes, Thomas Kurth, My Duyen Pham, Mikhail Tsurkan, Jens Friedrichs, Francis L. C. Morgan, Hans Kleemann, Olga Guskova, Uwe Freudenberg, Peter Fratzl, Carsten Werner, Christoph Tondera, Ivan R. Minev   +15 more
wiley   +1 more source

Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF₆/O₂ Gas Mixture

Nanomaterials
This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride.
Andrey Miakonkikh, Vitaly Kuzmenko
doaj   +1 more source