Results 131 to 140 of about 1,972 (161)
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Physics Bulletin, 1984
There is much interest at present in polysilicon in combination with a wide variety of other materials. The physical behaviour, structure and fabrication of polysilicon as well as its applications to a range of novel device structures were discussed at a recent meeting of the Electronics Group of The Institute of Physics.
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There is much interest at present in polysilicon in combination with a wide variety of other materials. The physical behaviour, structure and fabrication of polysilicon as well as its applications to a range of novel device structures were discussed at a recent meeting of the Electronics Group of The Institute of Physics.
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Arsenic-implanted polysilicon layers
Applied Physics, 1981The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide.
H. Ryssel +5 more
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Integrated Precision Polysilicon Resistors
ECS Meeting Abstracts, 2006Abstract not Available.
Janet M. Towner, John J. Naughton
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Polysilicon nanofilm pressure sensor
Sensors and Actuators A: Physical, 2009Abstract Utilizing 80 nm polysilicon nanofilm as piezoresistors, a pressure sensor with high performance is developed. The complete fabrication process is described. The pressure properties of the sensor were measured at the temperature from 0 to 200 °C.
Xiaowei Liu +4 more
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Tensile testing of polysilicon
Experimental Mechanics, 1999Tensile specimens of polysilicon are deposited on a silicon wafer; one end remains affixed to the wafer and the other end has a relatively large paddle that can be gripped by an electrostatic probe. The overall length of the specimen is less than 2 mm, but the smooth tensile portion can be as small as 1.5×2μm in cross section and 50μm long.
W. N. Sharpe +2 more
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Integrated Precision Polysilicon Resistors
ECS Transactions, 2007Two problems were encountered in the manufacture of precision polysilicon resistors that related to resistance variations across the wafer. In our process, we use boron to counter dope the phosphorus rich n-polysilicon. The first problem encountered involved variation with a circular pattern; the highest resistances were in the center of the wafer.
Janet M. Towner +2 more
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Electrical characterization of polysilicon surface roughness in double polysilicon EPROMS
Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, 2002Data retention in floating gate double-polysilicon erasable programmable read-only memories (EPROMs) strongly depends on the insulating properties of the interpolyoxide layer. The author describes a method for rapid evaluation of the interpolyoxide quality and the surface texture of the underlying polysilicon by simple electrical measurements.
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[1991] Proceedings. IEEE Micro Electro Mechanical Systems, 2002
M.M. Farooqui, A.G.R. Evans
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M.M. Farooqui, A.G.R. Evans
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