Results 31 to 40 of about 12,007 (187)

High-Efficiency Stacked Power Amplifier IC With 23% Fractional Bandwidth for Average Power Tracking Application

IEEE Access, 2019
This paper presents a two-stage stacked power amplifier integrated circuit (PAIC) for broadband and high efficiency using a 2-μm InGap/GaAs HBT process with a second-harmonic control circuit and a bias-switching circuit for an average power ...
Wooseok Lee, Hyunuk Kang, Hwiseob Lee, Jongseok Bae, Sungjae Oh, Hansik Oh, Hyungmo Koo, Jangsup Yoon, Keum Cheol Hwang, Kang-Yoon Lee, Youngoo Yang   +10 more
doaj   +1 more source

A Transformer-Based Dual-Mode Ka-Band CMOS Power Amplifier With Enhanced Back-Off Efficiency

IEEE Journal of Microwaves
This paper presents the differential-to-single-ended load-modulated (DISEL)-power amplifier, a transformer-based dual-mode Ka-band CMOS power amplifier designed to enhance power-added efficiency (PAE) under output back-off conditions while maintaining ...
Hyunsoo Kim, Jaeyong Lee, Changkun Park
doaj   +1 more source

A Design Approach to Maximize the Efficiency vs. Linearity Trade-Off in Fixed and Modulated Load GaN Power Amplifiers

IEEE Access, 2018
This paper proposes a design method to minimize the phase distortion (AM/PM) in gallium nitride (GaN) power amplifiers (PAs) without significantly worsening other key features such as efficiency, amplitude distortion, and gain.
Rocco Giofre, Paolo Colantonio, Franco Giannini   +2 more
doaj   +1 more source

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

IEEE Journal of the Electron Devices Society, 2021
The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage.
Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Samuel James Bader, James C. M. Hwang, Huili Grace Xing, Debdeep Jena   +7 more
doaj   +1 more source

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios [PDF]

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier
Barbosa Kortright, Miguel A., Simons, Rainee N., Waldstein, Seth W.   +2 more
core   +3 more sources

YlmG1 is localized exclusively to the chloroplast envelope membrane and is involved in preprotein translocation in Arabidopsis thaliana

FEBS Open Bio, EarlyView.
Cytosolically synthesized chloroplast preproteins are translocated across the outer and inner envelope membranes through translocons called TOC and TIC, respectively. In green algae and plants, the TIC core is composed of essential membrane proteins, Tic12, Tic20, and Tic214.
Mengyi Li, Xueyang Zhao, Masato Nakai
wiley   +1 more source

Third-order Intermodulation Reduction in Mobile Power Amplifiers by the First Stage Bias Control [PDF]

, 2012
In this paper, the third order intermodulation distortion (IMD3) of three-stage power amplifier (PA) is analyzed using the Volterra series. The analysis explains how the total IMD3 of the three-stage power amplifier can be reduced by the first-stage bias
Jung, J. H., Kwak, C. H., Lee, J. S.
core   +1 more source

Microwave Characteristics of an Independently Biased 3-stack InGaP/GaAs HBT Configuration [PDF]

, 2017
This paper investigates various important microwave characteristics of an independently biased 3-stack InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) chip at both small-signal and large-signal operation.
Duy Manh Luong, Kazuhiko Honjo, Ryo Ishikawa   +2 more
core   +2 more sources

Bacteria‐Responsive Nanostructured Drug Delivery Systems for Targeted Antimicrobial Therapy

Advanced Materials, EarlyView.
Bacteria‐responsive nanocarriers are designed to release antimicrobials only in the presence of infection‐specific cues. This selective activation ensures drug release precisely at the site of infection, avoiding premature or indiscriminate release, and enhancing efficacy.
Guillermo Landa, Gracia Mendoza, Silvia Irusta, Manuel Arruebo   +3 more
wiley   +1 more source

High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

Applied Physics Express
This study describes high-power and high-efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) for future sub-terahertz wireless communications.
Yusuke Kumazaki, Shiro Ozaki, Yasuhiro Nakasha, Naoya Okamoto, Atsushi Yamada, Toshihiro Ohki   +5 more
doaj   +1 more source