Results 141 to 150 of about 339,663 (292)
Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee +5 more
wiley +1 more source
A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner. [PDF]
Pino JD +6 more
europepmc +1 more source
Discrete component S-band power amplifier [PDF]
A spacecraft S-band power amplifier for Nimbus satellite is reported that achieves stability by use of moderate Q input and output circuits. The discrete component amplifier uses distributed inductance and small piston capacitors for resonance and ...
Block, A. F.
core +1 more source
The Effect of Purcell Cavities on the Lifetime of Thermally Activated Delayed Fluorescent Emitters
A pressing challenge to OLED displays and lighting is to balance high efficiency and long operational lifetime in the deep blue spectrum. The Purcell effect can reduce the triplet density and hence the probability for destructive energy‐driven triplet annihilation events that limit the OLED lifetime. Here we study of the Purcell effect on two different
Sritoma Paul +4 more
wiley +1 more source
CS-GA-XGBoost-Based Model for a Radio-Frequency Power Amplifier under Different Temperatures. [PDF]
Wang J, Zhou S.
europepmc +1 more source
A chiral photodetector capable of selectively distinguishing left‐ and right‐handed circularly polarized light is experimentally demonstrated. The device, which features a nanopatterned electrode inverse‐designed by a genetic algorithm within a metal–dielectric–metal nanocavity that incorporates a vacuum‐deposited small‐molecule multilayer, exhibits ...
Kyung Ryoul Park +3 more
wiley +1 more source
A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT. [PDF]
Li J +5 more
europepmc +1 more source
Laser Cooled High-Power Fiber Amplifier
A theoretical model for laser cooled continuous-wave fiber amplifier is presented. The amplification process takes place in the Tm3+-doped core of the fluoride ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF) glass fiber. The cooling process takes place in the Yb3+:ZBLAN
Nemova, Galina
core
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
A Dual Load-Modulated Doherty Power Amplifier Design Method for Improving Power Back-Off Efficiency. [PDF]
Jin Y, Dai Z, Ran X, Xu C, Li M.
europepmc +1 more source

