Results 41 to 50 of about 6,179,454 (334)
Analysis of power converters with devices of SiC for applications in electric traction systems [PDF]
, 2016 This article presents the analysis of two topologies of power converters. Voltage Source Inverter (VSI) and Current Source Inverter (CSI) proposals for traction system applications, these topologies are implemented with silicon carbide devices.
Fernández Palomeque, Efrén Esteban +3 more
core +1 more source
IET Power Electronics, EarlyView., 2022 The article discusses the novel topology with high gain and low voltage stress DC‐DC converter based on switched‐capacitor and switched‐inductors for fuel cell and PV applications. The converter performance is analyzed and verified with the hardware prototype (22/400V, 50kHz).
Md Samiullah +4 more
wiley +1 more source
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
doaj +1 more source
Power MOSFET temperature measurements [PDF]
1982 IEEE Power Electronics Specialists conference, 1982 Three temperature-sensitive electrical parameters are compared as thermometers for power MOSFET devices. The parameters are the forward drain-body diode voltage, the source-gate voltage, and the on-resistance. The results are also compared with temperatures measured with an infrared microradiometer.
David L. Blackburn, David W. Berning
openaire +1 more source
IET Power Electronics, EarlyView., 2023 This paper proposes a new Double T‐type H‐bridge (DTH) module configuration that can produce 9, 13, 17, 19, 21, and 25 levels using reduced components. Abstract Renewable energy sources are subject to input source uncertainties, which can negatively impact output voltage THD.
Omid Zolfagharian +2 more
wiley +1 more source
A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
IEEE Journal of the Electron Devices Society, 2021 A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li +3 more
doaj +1 more source
Design of Pulse Power Supply for High-Power Semiconductor Laser Diode Arrays
IEEE Access, 2019 This paper mainly introduces a design circuit and control method of pulse power supply for high-power semiconductor laser diode arrays. According to the high voltage and large current operating characteristics of semiconductor laser, the control strategy
Qinglin Zhao +4 more
doaj +1 more source
Applications of combined MOSFET-IGBT power leg with reduced switching losses [PDF]
, 2008 This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested combined use of those different switches is intended to be applied in PWM controlled single and three phase inverters.
Marinov, Angel S +2 more
core
Printed Interconnects for Heterogeneous Systems Integration on Flexible Substrates
Advanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.Key components (sensors, energy devices, communication devices, computing chips, and interconnects) of flexible hybrid electronic (FHE) system connected via conductive printed metal tracks. The figure in the insets shows out‐of‐plane printed interconnects providing opportunities for lithography‐free formation of VIAs, in‐plane access of UTCs pads, and ...
Abhishek Singh Dahiya +3 more
wiley +1 more source