Results 11 to 20 of about 39,831 (163)

R&D of 3 300V SiC MOSFET With Embedded SBD

Zhongguo dianli, 2021
In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU, Haihui LUO, Chenzhan LI, Guan Song   +3 more
doaj   +1 more source

Devices for express diagnostics of power semiconductor devices and semiconductor converters

Омский научный вестник, 2023
The increase in the power of power semiconductor converters operated in the railway industry is associated with the use of group connections of power semiconductor devices in them, the variation in the parameters of which, and, therefore, their unequal ...
E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov   +4 more
doaj   +1 more source

Characterization and optimization of gate driver turn-off voltage for eGaN HEMTs in a phase-leg configuration

Energy Reports, 2022
Affected by high switching speed and parasitic parameters, crosstalk problem of eGaN HEMT in a phase-leg configuration cannot be ignored. By decreasing gate driver turn-off voltage, the false turn-on phenomenon of device caused by crosstalk can be ...
Haihong Qin, Wenlu Wang, Zihe Peng, Ao Liu, Song Bai   +4 more
doaj   +1 more source

Improving Adhesive Bonding of Al Alloy by Laser-Induced Micro–Nano Structures

Applied Sciences, 2022
In this paper, laser surface treatment of Al alloy was studied by comparison of sandblasting and laser ablation. The effects of laser spot distribution on surface roughness, contact angle, chemical composition and shear strength of Al alloy were analyzed.
Guang Li, Mingwei Lei, Chen Liang, Kai Li, Benhai Li, Xiaohua Wang, Junlong Wang, Zhipeng Wei   +7 more
doaj   +1 more source

Investigations on 2Cr13 Stainless Valves after Dry-Type Laser Degumming

Micromachines, 2022
The disabled glue on valve surfaces is known to reduce aircraft durability and performance. In this paper, glue contaminants were removed from 2Cr13 stainless valves by dry-type laser processing with a cold air gun and compared with the chemical soaking ...
Guang Li, Kai Li, Lu Zhang, Chen Liang, Chen Wang, Benhai Li, Junlong Wang, Xiaohua Wang, Mingwei Lei, Zhipeng Wei   +9 more
doaj   +1 more source

A Review of Thermal Design for IGBT Module

Zhongguo dianli, 2020
In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Guoyou LIU, Yangang WANG, Haihui LUO, Fang QI, Xiang LI, Yibo WU   +5 more
doaj   +1 more source

Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

IEEE Journal of the Electron Devices Society, 2020
Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications.
Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, Bo Zang   +9 more
doaj   +1 more source

Study on Wide Dimming Range Solution for LLC LED Driver Based on an Accurate Time-Domain Analysis Considering the Parasitical Components

IEEE Access, 2022
To achieve ultra-deep dimming ratio in LED driver application, the resonant process of LLC resonant converter considering the critical parasitic components has been analyzed in detail with time-domain solution in this paper.
Sen Xu, Xiaogao Xie, Chinan Chen, Xinke Wu   +3 more
doaj   +1 more source

Flexible optoelectronic synaptic transistors for neuromorphic visual systems

APL Machine Learning, 2023
Neuromorphic visual systems that integrate the functionalities of sensing, memory, and processing are expected to overcome the shortcomings of conventional artificial visual systems, such as data redundancy, data access delay, and high-energy consumption.
Xiao Liu, Dongke Li, Yue Wang, Deren Yang, Xiaodong Pi   +4 more
doaj   +1 more source

Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
doaj   +1 more source