Results 21 to 30 of about 1,801 (215)

A new generation of high-power semiconductor devices [PDF]

Tehnika, 2014
Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
doaj   +1 more source

Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals

Advanced Engineering Materials, EarlyView.
This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao, Sriram Subramanian, Gianluca Memoli   +2 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Energies, 2023
This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs).
Olayiwola Alatise, Arkadeep Deb, Erfan Bashar, Jose Ortiz Gonzalez, Saeed Jahdi, Walid Issa   +5 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

New approach to power semiconductor devices modeling

Journal of Telecommunications and Information Technology, 2004
The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski, Małgorzata Napieralska   +1 more
doaj   +1 more source

Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions

Yuanzineng kexue jishu, 2023
The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
doaj   +1 more source

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Energies, 2023
Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary, Mouloud Denaï, Shady S. Refaat, Georgios Pissanidis   +3 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

Energies, 2023
This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs).
Abdulkarim Athwer, Ahmed Darwish
doaj   +1 more source