Results 21 to 30 of about 41,472 (260)
A new generation of high-power semiconductor devices [PDF]
Tehnika, 2014 Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
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Advanced Engineering Materials, EarlyView.This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera +8 more
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Energies, 2023 This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs).
Olayiwola Alatise +5 more
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Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology
Advanced Engineering Materials, EarlyView.We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham +7 more
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Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Energies, 2023 Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary +3 more
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A Compact Spin‐Coated Graphene UWB Antenna for Breast Tumor Detection
Advanced Engineering Materials, EarlyView.A compact, spin‐coated graphene ultra‐wideband patch antenna designed for breast tumor detection, capable of distinguishing between malignant and benign tumors. This innovative antenna can serve as an effective initial screening tool, particularly in resource‐limited settings such as rural areas, where access to advanced medical equipment like MRI and ...
Raja Rashidul Hasan +9 more
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New approach to power semiconductor devices modeling
Journal of Telecommunications and Information Technology, 2004 The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski +1 more
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Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions
Yuanzineng kexue jishu, 2023 The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
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Energies, 2023 This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs).
Abdulkarim Athwer, Ahmed Darwish
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Soft Mechanical‐Electrical Logic Using Liquid Metal‐Filled 3D‐Printed Architectures
Advanced Engineering Materials, EarlyView.We present 3D‐printed soft mechanical–electrical logic elements that use liquid metal–filled silicone tubes actuated by thermoplastic polyurethane/polylactic acid (TPU/PLA) architectures to produce Boolean operations. Complementary normally open and normally closed unit cells perform repeatable binary transitions and can be combined into more complex ...
Christoph Lehmann +2 more
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