Results 31 to 40 of about 1,801 (215)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Diamond Metasurface‐Based Optical Tweezers With Enhanced Robustness

Advanced Science
Optical tweezers have revolutionized the manipulation of micro‐ and nano‐scale particles, with impacts across biophysics, materials science, and quantum optics.
Jing‐Yuan Zhu, Ke‐Xue Li, Pei‐Nan Ni, Shang‐Heng Li, Si‐Rui Wang, Wen‐Jie Dou, Yong‐Yang Zhu, Zhi‐Peng Wei, Chong‐Xin Shan   +8 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Sensors, 2017
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/
Lin-Yue Liu, Ling Wang, Peng Jin, Jin-Liang Liu, Xian-Peng Zhang, Liang Chen, Jiang-Fu Zhang, Xiao-Ping Ouyang, Ao Liu, Run-Hua Huang, Song Bai   +10 more
doaj   +1 more source

Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Research on Power Semiconductor Converter Technology for Rail Transit Applications

机车电传动, 2020
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj  

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review

Energies, 2022
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
doaj   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source