Results 51 to 60 of about 6,409,421 (306)

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review

Energies, 2022
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Junction Temperature Control System to Increase the Lifetime of IGBT-Power-Modules in Synchronous Motor Drives Without Affecting Torque and Speed

IEEE Open Journal of Power Electronics, 2020
Load changes of electrical machines driven by inverters cause temperature swings of the semiconductor devices in IGBT modules of the inverters. These temperature swings lead to mechanical strain in the different material layers of the IGBT-power-modules ...
Julian Wolfle, Maximilian Nitzsche, Johannes Ruthardt, Jorg Roth-Stielow   +3 more
doaj   +1 more source

Wave-mixing analysis for THz-signals generation in dc-biased semiconductor optical devices at room temperature [PDF]

, 2010
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A comparison of the optical time-fluctuations measured at their output stresses the importance of a resonant cavity in THz-signals generation from ...
Frederic Surre, Surre, Frederic, Latkowski, Sylwester, Sylwester Latkowski, Maldonado-Basilio, Ramón, Pascal Landais, Ramon Maldonado-Basilio, Landais, Pascal   +7 more
core   +2 more sources

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Electronics Letters
This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest ...
Bingke Zhang, Hang Zhou, Bo Yi, Huan Ge, Rui Jin, Tao Zhu   +5 more
doaj   +1 more source

On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces

Opto-Electronic Advances
Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has ...
Cheng-Long Zheng, Pei-Nan Ni, Yi-Yang Xie, Patrice Genevet   +3 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Review of semiconductor devices and other power electronics components at cryogenic temperature

iEnergy
With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures.
Yuchuan Liao, Abdelrahman Elwakeel, Yudi Xiao, Rafael Peña Alzola, Min Zhang, Weijia Yuan, Alfonso J. Cruz Feliciano, Lukas Graber   +7 more
doaj   +1 more source