Results 51 to 60 of about 1,801 (215)

Research progress on irradiation effect of InP-based high electron mobility transistors

He jishu
Indium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng, ZHOU Shuxing, CAO Wenyu, WEI Yanfeng, WANG Jingyang, LI Shusen, YAN Jiasheng, LIANG Guijie   +7 more
doaj   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

Advanced Functional Materials, EarlyView.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar, Fumikazu Murakami, Xing He, Konnor Koons, Xinyan Li, Bumseop Kim, Shihan Qin, Varun Harbola, Jochen Mannhart, Yimo Han, Ruijuan Xu, Shengxi Huang, Andrew M. Rappe, Hanyu Zhu   +13 more
wiley   +1 more source

Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures

Yuanzineng kexue jishu, 2023
The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.
FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,*
doaj   +1 more source

A Secondary Reconfigurable Inverter and Its Control Strategy

Applied Sciences, 2020
This article proposes a topology of the secondary reconfigurable inverter and the corresponding fault-tolerant control strategy. When the secondary reconfigurable inverter is operating normally, its topology structure is the TPSS circuit.
Yan Li, Peng Xiang, Yandong Chen
doaj   +1 more source

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

Advanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo   +14 more
wiley   +1 more source

Correlated Metal LaNiO3 as a p‐Type Transparent Conductor

Advanced Functional Materials, EarlyView.
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal, Emmeline G. Poole, Jacob Plowman, Troy D. Manning, Teresa Partida Manzanera, Kevin Sanderson, Matthew S. Dyer, Matthew J. Rosseinsky, Jonathan Alaria   +8 more
wiley   +1 more source

Estimation of Semiconductor Switching Losses under Hard Switching using Matlab/Simulink Subsystem

Electrical, Control and Communication Engineering, 2013
The conventional tools for the system level simulation of the switch-mode power converters (for example, MATLAB/SIMILINK) allow simulating the behavior of a power converter jointly operating with the control system in a closed automatic regulation system.
Volodymyr Ivakhno, Volodymyr V. Zamaruiev, Olga Ilina   +2 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source