Results 51 to 60 of about 250,697 (304)

Corrosion and Process Analysis of a Preoxidized MgO Recyclate‐Based Cermet Anode in Laboratory‐Scale Na‐Cryolite Molten Salt Electrolysis of Aluminum at 1000°C

Advanced Engineering Materials, EarlyView.
EDX elemental map of the pre‐oxidized MgO–steel cermet anode cross section after electrolysis. The development of inert anodes for aluminum electrolysis remains challenging due to the high corrosivity of cryolite‐based melts at 950°C–1000°C. This study investigates the corrosion and process behavior of a carbon‐free MgO–steel cermet anode derived from ...
Alexander Adamczyk, Farhan Hossain, Felipe A. Garcia Paz, Serhii Yaroshevskyi, Felix Drechsler, Daniel Vogt, Christos G. Aneziris, Alexandros Charitos   +7 more
wiley   +1 more source

Diamond Metasurface‐Based Optical Tweezers With Enhanced Robustness

Advanced Science
Optical tweezers have revolutionized the manipulation of micro‐ and nano‐scale particles, with impacts across biophysics, materials science, and quantum optics.
Jing‐Yuan Zhu, Ke‐Xue Li, Pei‐Nan Ni, Shang‐Heng Li, Si‐Rui Wang, Wen‐Jie Dou, Yong‐Yang Zhu, Zhi‐Peng Wei, Chong‐Xin Shan   +8 more
doaj   +1 more source

Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
doaj   +1 more source

Performance evaluation of on-chip wavelength conversion based on InP/In$_{1-x}$Ga$_x$As$_y$P$_{1-y}$ semiconductor waveguide platforms [PDF]

, 2020
We propose and design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and report the results of effective wavelength conversion based on this platform.
Campbell, Michael A., Copner, Bethan, Copner, Nigel, Duan, Lina, Fan, Wei, Fu, Haiwei, Gong, Yongkang, Hughes, Ben, Jia, Zhenan, Lazzaini, Mattia, Li, Kang, Ma, Chengju, Wen, Jin   +12 more
core   +2 more sources

Cathodic Cage Plasma Deposition of Nanostructured Cu–Fe–Se Coatings on Poly(methyl Methacrylate)

Advanced Engineering Materials, EarlyView.
Nanostructured Cu–Fe–Se coatings are deposited on PMMA by a modified cathodic cage plasma process, enabling low‐temperature deposition on polymer substrates. A transition from discontinuous to compact morphology is observed with temperature, with optimal properties at 200°C, where improved CuFeSe2‐type bonding, lowest sheet resistance, and favorable ...
V. S. S. Sobrinho, M. Naeem, T. H. C. Costa, M. S. Libório, J. C. A. Queiroz, C. B. B. Luna, R. R. M. Sousa, P. S. Vieira, E. M. Araújo   +8 more
wiley   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Research on Power Semiconductor Converter Technology for Rail Transit Applications

机车电传动, 2020
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj  

Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review

Energies, 2022
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
doaj   +1 more source

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]

, 2014
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah, Brown, Raphael, Li, Xu, Macfarlane, Douglas, Ternent, Gary, Thayne, Iain, Wasige, Edward, Zhou, Haiping   +7 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source