Results 71 to 80 of about 1,801 (215)
An interface‐defect co‐engineered strategy enables bias‐programmable integration of self‐powered photodetection and low‐power synaptic functionalities within a single‐material amorphous Ga2O3 device. This design achieves reversible switching via voltage modulation, supporting high‐contrast imaging and visual memory, and demonstrates a neuromorphic ...
Wanjun Li +13 more
wiley +1 more source
Recent research progress of SiC superjunction devices
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping +4 more
doaj
Effective control over the crystalline contact plane and microstructure of a naphthalenediimide‐bithiazole copolymer enables high‐performance n‐type thermoelectrics. While rubbing alignment induces a detrimental edge‐on orientation, subsequent solvent vapor‐induced re‐orientation facilitates a favorable mixed face‐on/edge‐on morphology.
Suhao Wang +13 more
wiley +1 more source
Semiconductor Switch: Key Components and Future Developments in Power Electronics [PDF]
The rapid development of modern industry has led to the expansion of the demand for high-end devices in a wider range of fields. Semiconductor switches have also become a popular research area as key components in electronic engineering. It also plays an
Ji Mengdie, Zhu Guli
doaj +1 more source
ABSTRACT Next‐generation implantable neural‐interfacing devices are increasingly constrained by the coupled demands of electrode miniaturization, electrochemical performance, and implantation infection risk. Femtosecond laser–based hierarchical surface restructuring (HSR) technology has emerged as a scalable, manufacturing‐compatible platform for ...
Henna Khosla +12 more
wiley +1 more source
Catalytically Enhanced Near Room‐Temperature Hydrogen Sensing Using Pd‐ZnO Colloidal Crystals
Pd‐decorated ZnO colloidal crystal monolayers demonstrate excellent performance across a wide hydrogen concentration range at 33°C, with high selectivity and reproducible device fabrication. The sensors show strong responses even at low‐ppm H2 concentrations and an ultra‐low detection limit of 82 ppb, indicating their suitability for diverse hydrogen ...
Hamidah Alluhaybi +13 more
wiley +1 more source
Using of the Modern Semiconductor Devices Based on the SiC
This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with ...
Pavel Drabek
doaj
Dopant Distribution in Ga‐Implanted CdO—A Correlative Microscopy and Molecular Dynamics Study
This work demonstrates that ion implantation offset angle could modulate carrier concentration and mobility in cadmium oxide thin films. Combining correlative microscopy workflow and molecular dynamics simulations, this study reveals the control of interfacial cluster density with tailoring implantation angles, and the optimum offset angle that ...
Morvarid Ghorbani +7 more
wiley +1 more source
This work presents a ligand‐pairing strategy that reconstructs lead sulfide quantum dot surfaces for efficient short‐wave infrared optoelectronics. A low‐reactivity thiourea precursor combined with hydrobromic acid enables monodisperse and fully passivated quantum dots.
Dongeon Kim +16 more
wiley +1 more source
Polymer Substrates for Flexible Sensors: Advances and Contributions to Smart Agriculture
This review comprehensively summarizes recent advances in polymer‐based flexible sensors for smart agriculture, focusing on polymer substrate design, interface engineering, and applications in soil, plant, animal, aquaculture, and post‐harvest monitoring.
Yihui Li +12 more
wiley +1 more source

