Review of semiconductor devices and other power electronics components at cryogenic temperature
iEnergyWith the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures.
Yuchuan Liao +7 more
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Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Advanced Functional Materials, EarlyView.Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Research methods of reliability indicators of rectifier diode in tablet execution
EPJ Web of Conferences, 2015 A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
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A PCB Integrated Differential Rogowski Coil for Non-Intrusive Current Measurement Featuring High Bandwidth and dv/dt Immunity [PDF]
, 2015 In the development of next-generation power modules for electric vehicles, demands for high efficiency, reliability, low cost, high power density and therefore small size are of major importance.
De Doncker, Rik W. +2 more
core
Photoswitching Conduction in Framework Materials
Advanced Functional Materials, EarlyView.This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez +4 more
wiley +1 more source
Research progress on irradiation effect of InP-based high electron mobility transistors
He jishuIndium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng +7 more
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Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures
Yuanzineng kexue jishu, 2023 The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.
FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,*
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Cathodic and Anodic Material Diffusion in Polymer/Semiconductor-Nanocrystal Composite Devices [PDF]
, 2007 In the present day, the information technologies and telecommunications sector continually increase their demand for low cost, low power consumption, high performance electroluminescent devices for display applications.
Bertoni, Cristina +4 more
core +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Increase resource power electronics module on the physics of failure method
MATEC Web of Conferences, 2014 A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
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