Results 81 to 90 of about 1,801 (215)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

n‐Type Semiconductor Hydrogels for Tunable Organic Electrochemical Transistors Operation and Evaporation‐Driven Synergistic Energy Harvesting and Thermal Management

Advanced Functional Materials, EarlyView.
This study develops a tunable n‐OSC hydrogel (PBFDO‐PAAc) platform with a tunable porous network and thermoelectric properties. It demonstrates the first report of n‐OSC hydrogels for evaporation‐driven hydrovoltaic‐thermoelectric electricity generation as well as chemically dedoping‐mediated OECT working mode reconfiguration. This work expands n‐OSCs’
Zhenli Zhou, Cong Huang, Haohong Jiang, Yuhao Jiang, Yaoyao Zhu, Boyuan Li, Yi Wang, Enna Ha, Ni Zhao, Shu‐Jen Wang   +9 more
wiley   +1 more source

Present Problems of Reliability of Power Semiconductor Devices

Acta Polytechnica, 2000
The paper presents an overview of the main causes of failures of modern switching devices as power MOSFETs, IGBTs, GTOs. The attention is paid to problems of both homogeneity of semiconductor structures and operating conditions, especially at high ...
V. Benda
doaj  

Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring

IET Power Electronics
The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved.
Zhonghao Dongye, Wuyu Zhang, Lei Qi, Bowen Gu, Hong Shen, Xiangyu Zhang, Xiang Cui   +6 more
doaj   +1 more source

Unusual Temperature‐Enhanced Bulk Photovoltaic Effect Beyond the Centrosymmetric Phase in CuCrP2S6 van der Waals Crystals

Advanced Functional Materials, EarlyView.
Contrary to conventional expectations, the bulk photovoltaic effect in CuCrP2S6 is enhanced rather than suppressed upon transitioning into the crystallographically centrosymmetric phase. Dynamic Cu‐ion disorder creates transient polar states, which substantially amplifies zero‐bias photocurrent (shift‐current) generation, establishing dynamic symmetry ...
Ryoga Murata, Takao Sasagawa
wiley   +1 more source

Intrinsic Interfacial Energy Alignment Enables ETL‐Free Organic Solar Cells

Advanced Functional Materials, EarlyView.
Molecular orientation of the small‐molecule donor BTR‐Cl induces a vacuum‐level shift that pins the Fermi level at ∼4.4 eV at the active layer/Ag interface, enabling Ohmic contact formation without an electron transport layer. This strategy is extended to ternary PM6:Y6:BTR‐Cl devices, achieving an ETL‐free efficiency of 18.6% with enhanced operational
Heng Liu, Yuang Fu, Cangyu Wang, Luhang Xu, Xian‐Kai Chen, Man Chung Tang, Xinhui Lu   +6 more
wiley   +1 more source