Results 61 to 70 of about 6,409,421 (306)
Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs [PDF]
, 2011 This paper, for the first time, investigates the reliability of wire-bonded low-voltage discrete power trench n-MOSFETs that have been subjected to repetitive unclamped inductive switching (RUIS).
Ian Kennedy +7 more
core +1 more source
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Research methods of reliability indicators of rectifier diode in tablet execution
EPJ Web of Conferences, 2015 A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
Advanced Functional Materials, EarlyView.This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan. [PDF]
, 2005 Wide band gap GaN semiconductor has a variety of applications in optoelectronic devices such as lightemitting diodes and laser ...
Hudeish, A.Y. +4 more
core +1 more source
SiC power devices — Present status, applications and future perspective
, 2011 Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies.
Ghandi, Reza, +5 more
core +1 more source
Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes
Advanced Functional Materials, EarlyView.We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar +13 more
wiley +1 more source
Increase resource power electronics module on the physics of failure method
MATEC Web of Conferences, 2014 A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
Advanced Functional Materials, EarlyView.An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Research progress on irradiation effect of InP-based high electron mobility transistors
He jishuIndium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng +7 more
doaj +1 more source