Results 61 to 70 of about 250,697 (304)

Hardening electronic devices against very high total dose radiation environments [PDF]

, 1972
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B., Dolan, R., Roosild, S., Shedd, W.   +3 more
core   +2 more sources

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Junction Temperature Control System to Increase the Lifetime of IGBT-Power-Modules in Synchronous Motor Drives Without Affecting Torque and Speed

IEEE Open Journal of Power Electronics, 2020
Load changes of electrical machines driven by inverters cause temperature swings of the semiconductor devices in IGBT modules of the inverters. These temperature swings lead to mechanical strain in the different material layers of the IGBT-power-modules ...
Julian Wolfle, Maximilian Nitzsche, Johannes Ruthardt, Jorg Roth-Stielow   +3 more
doaj   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

Advanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang, Max Gießübel, Pankaj Dharpure, Andrea Albert, Vira Niestierkina, Paul Mulvaney, Mukundan Thelakkat, Jürgen Köhler   +7 more
wiley   +1 more source

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Electronics Letters
This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest ...
Bingke Zhang, Hang Zhou, Bo Yi, Huan Ge, Rui Jin, Tao Zhu   +5 more
doaj   +1 more source

On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces

Opto-Electronic Advances
Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has ...
Cheng-Long Zheng, Pei-Nan Ni, Yi-Yang Xie, Patrice Genevet   +3 more
doaj   +1 more source

Graded junction termination extensions for electronic devices [PDF]

, 2006
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices.
Isaacs-Smith, Tamara, Merrett, J. Neil, Sheridan, David C., Williams, John R.   +3 more
core   +2 more sources

Rutile GeO2: an ultrawide-band-gap semiconductor with ambipolar doping

, 2019
Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap.
Chae, Sieun, Heron, John T., Kioupakis, Emmanouil, Lee, Jihang, Mengle, Kelsey A.   +4 more
core   +1 more source

Passively mode-locked semiconductor lasers and their applications [PDF]

, 2008
In this paper we present some characterizations of passively mode-locked semiconductor lasers. These lasers are multimode and they exhibit a modulation of their output power even though they are DC-biased.
Landais, Pascal, Latkowski, Sylwester, Surre, Frederic   +2 more
core   +1 more source

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

Advanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich, Paul Markus, Matthias Stöter, Bernhard Biersack, Rainer Schobert, Josef Breu, Georg Papastavrou   +6 more
wiley   +1 more source