Results 41 to 50 of about 1,801 (215)
Load changes of electrical machines driven by inverters cause temperature swings of the semiconductor devices in IGBT modules of the inverters. These temperature swings lead to mechanical strain in the different material layers of the IGBT-power-modules ...
Julian Wolfle +3 more
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest ...
Bingke Zhang +5 more
doaj +1 more source
On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces
Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has ...
Cheng-Long Zheng +3 more
doaj +1 more source
Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
wiley +1 more source
Review of semiconductor devices and other power electronics components at cryogenic temperature
With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures.
Yuchuan Liao +7 more
doaj +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Research methods of reliability indicators of rectifier diode in tablet execution
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Room‐Temperature Synthesis of Strongly Confined Lead Halide Perovskite Quantum Dots
CsPbX3${\rm CsPbX}_3$ lead halide perovskite quantum dots (QDs) are synthesized in a room‐temperature, five‐minute synthesis, yielding size‐controlled QDs with bright, tunable emission governed by reaction conditions and halide composition. A strongly binding ligand, OD‐PEA, ensures months‐long stability under ambient conditions and facilitates their ...
Anna Abfalterer +13 more
wiley +1 more source

