Results 41 to 50 of about 41,472 (260)
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest ...
Bingke Zhang +5 more
doaj +1 more source
On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces
Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has ...
Cheng-Long Zheng +3 more
doaj +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Review of semiconductor devices and other power electronics components at cryogenic temperature
With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures.
Yuchuan Liao +7 more
doaj +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Research methods of reliability indicators of rectifier diode in tablet execution
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source

