Results 41 to 50 of about 6,409,421 (306)

Production and characterisation of nanoparticulate silicon photovoltaic devices [PDF]

, 2009
Includes bibliographical references (leaves 104-111).A first approach in fabricating electronically functional nanoparticulate silicon solar cells, by using low cost screen printing on paper substrates, has been developed.
Solana, Oluwole David
core   +1 more source

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

Energies, 2023
This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs).
Abdulkarim Athwer, Ahmed Darwish
doaj   +1 more source

Ballistic superconductivity in semiconductor nanowires [PDF]

, 2017
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems ...
Önder Gül, Kenji Watanabe, Maja C. Cassidy, Plissard, S.R. (author), van Veen, Jasper, Cassidy, M.C. (author), van Veen, J. (author), Wimmer, M., Zhang, H. (author), Jasper van Veen, Zhang, H., Marina Quintero-Pérez, Kouwenhoven, Leo P, Leo P. Kouwenhoven, Taniguchi, Takashi (author), de Vries, F.K., Erik P.A.M. Bakkers, Vries, Folkert K de, Michał P. Nowak, Bommer, J.D.S. (author), Bommer, J.D.S., Sébastien R Plissard, Zhang, Hao, Nowak, M.P., van Woerkom, D.J. (author), Koelling, Sebastian, Vincent Mourik, van Veen, J., Takashi Taniguchi, Taniguchi, T., Koelling, S., Moor, M.W.A. de, Mourik, Vincent (author), Kun Zuo, van Woerkom, D.J., Bommer, Jouri D.S., Vries, F.K. de, Conesa-Boj, S., Sebastian Koelling, Quintero Pérez, M., Conesa Boj, S Sonia, Conesa Boj, S., Michiel W. A. de Moor, Goswami, Srijit, Srijit Goswami, Mourik, Vincent, Michael Wimmer, Gül, Ö., Nowak, Michał P, Gül, Önder Tolga, Conesa Boj, S. (author), Wimmer, Michael, Cassidy, Maja C., Car, Diana, Kouwenhoven, Leo P., Zuo, Kun, Koelling, Sebastian (author), Gül, Önder (author), Plissard, SR Sebastien, Bakkers, Erik P.A.M., Car, D Diana, Jouri D. S. Bommer, Folkert K. de Vries, Hao Zhang, Cassidy, M.C., Bakkers, Erik P.A.M.; id_orcid, Bommer, Jouri DS, Gül, Önder, Kölling, S Sebastian, Mourik, V., Nowak, M.P. (author), Wimmer, M.T. (author), Plissard, S.R., Van Woerkom, David J, de Moor, M.W.A. (author), van Woerkom, David J., Kouwenhoven, Leo P. (author), Car, Diana (author), de Vries, F.K. (author), de Vries, Folkert K., Car, D., Quintero-Pérez, Marina, Watanabe, Kenji, Cassidy, M C, Watanabe, Kenji (author), Taniguchi, Takashi, Diana Car, Plissard, Sébastien R., Goswami, S. (author), Goswami, S., Kouwenhoven, L.P., de Moor, M.W.A., Moor, MWA de, Wimmer, M, Bakkers, E.P.A.M., Quintero Perez, M. (author), Watanabe, K., Bakkers, E.P.A.M. (author), Veen, Jasper van, Zuo, K., Wimmer, M.T., Nowak, Michał P., David J. van Woerkom, Bakkers, EPAM Erik, Veen, J. van, Zuo, K. (author), de Moor, Michiel W.A., Sonia Conesa-Boj, Woerkom, D.J. van, Quintero-Pérez, M   +109 more
core   +3 more sources

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Diamond Metasurface‐Based Optical Tweezers With Enhanced Robustness

Advanced Science
Optical tweezers have revolutionized the manipulation of micro‐ and nano‐scale particles, with impacts across biophysics, materials science, and quantum optics.
Jing‐Yuan Zhu, Ke‐Xue Li, Pei‐Nan Ni, Shang‐Heng Li, Si‐Rui Wang, Wen‐Jie Dou, Yong‐Yang Zhu, Zhi‐Peng Wei, Chong‐Xin Shan   +8 more
doaj   +1 more source

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Sensors, 2017
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/
Lin-Yue Liu, Ling Wang, Peng Jin, Jin-Liang Liu, Xian-Peng Zhang, Liang Chen, Jiang-Fu Zhang, Xiao-Ping Ouyang, Ao Liu, Run-Hua Huang, Song Bai   +10 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Research on Power Semiconductor Converter Technology for Rail Transit Applications

机车电传动, 2020
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj