Results 41 to 50 of about 250,697 (304)
Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Energies, 2023 Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary +3 more
doaj +1 more source
Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
core +1 more source
Handbook of Establishing and Maintaining Oxygen‐Free Atmospheres
Advanced Engineering Materials, EarlyView.This study presents a practical framework for creating oxygen‐free atmospheres at ambient pressure using silane‐doped inert gases. The results show that ultra‐low oxygen levels and strongly reduced water content can be achieved through controlled silane dosing, drying systems, and sensor monitoring.
Sascha Jan Zimmermann +3 more
wiley +1 more source
Sensors, 2017 Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/
Lin-Yue Liu +10 more
doaj +1 more source
Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions
Yuanzineng kexue jishu, 2023 The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
doaj +1 more source
Energies, 2023 This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs).
Abdulkarim Athwer, Ahmed Darwish
doaj +1 more source
Dissipation through spin Coulomb drag in electronic spin transport and optical excitations [PDF]
, 2006 Spin Coulomb drag (SCD) constitutes an intrinsic source of dissipation for spin currents in metals and semiconductors. We discuss the power loss due to SCD in potential spintronics devices and analyze in detail the associated damping of collective spin ...
D'Amico, I., Ullrich, C. A.
core +1 more source
Advanced Engineering Materials, EarlyView.ZnS‐MXene‐TiO2 nanocomposite heterojunction for photocatalytic decomposition of this methylene blue dye (MB) greatly improves light absorption, charge separation, and active site area. Two‐dimensional MXene forms nanocomposites by easily combining them with 0D (quantum dots), 1D (tube and wire), 2D (plane and sheet), and 3D (particle and lamellar ...
Latiful Kabir +7 more
wiley +1 more source
New approach to power semiconductor devices modeling
Journal of Telecommunications and Information Technology, 2004 The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski +1 more
doaj +1 more source
New developments in power semiconductors [PDF]
, 1983 This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power.
Sundberg, G. R.
core +1 more source