Results 11 to 20 of about 6,409,421 (306)
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
, 2023 Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications.
Ichiro Omura, Ravi Nath Tripathi
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, 2021 The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys.
Zbigniew Lisik +2 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
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, 2021 Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates ...
Zhen-Huang Gu, Chao-Tsung Ma
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Energies, 2021 The problem of an influence of cooling conditions of power semiconductor devices on properties of selected DC–DC converters is considered. The new version of electrothermal average model of a diode-transistor switch for SPICE (Simulation Program with ...
Krzysztof Górecki
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Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
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Design of High-Performance Driving Power Supply for Semiconductor Laser
, 2023 High power semiconductor laser is a kind of photoelectric device with high efficiency and high stability, the performance of its drive system directly affects its output characteristics and service life.
Bin Feng +4 more
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, 2022 S.345-371The benefits of SiC devices are demonstrated in different application. Therefore different power and voltage ranges from low voltage to medium voltage are addressed. The power electronic circuits are described and the results are shown.
Schönberger, Stefan +5 more
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Vertical GaN MOSFET Power Devices
, 2023 Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices.
An-Chen Liu +4 more
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Праці Інституту електродинаміки Національної академії наук України, 2022 The principles of construction and improvement of magnetic-semiconductor devices of power converter technology using a complex synthesis of their elements, keys, nodes, and structures are considered in specific examples.
В.В. Голубєв +3 more
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